JY

Joseph A. Yedinak

FS Fairchild Semiconductor: 49 patents #4 of 715Top 1%
ON onsemi: 11 patents #135 of 1,901Top 8%
Harris: 5 patents #322 of 2,288Top 15%
📍 Mountain Top, PA: #2 of 36 inventorsTop 6%
🗺 Pennsylvania: #391 of 74,527 inventorsTop 1%
Overall (All Time): #33,416 of 4,157,543Top 1%
65
Patents All Time

Issued Patents All Time

Showing 26–50 of 65 patents

Patent #TitleCo-InventorsDate
8836028 Superjunction structures for power devices and methods of manufacture Mark L. Rinehimer, Praveen Muraleedharan Shenoy, Jaegil LEE, Dwayne S. Reichl, Harold Heidenreich 2014-09-16
8803207 Shielded gate field effect transistors Thomas E. Grebs, Nathan Kraft, Rodney S. Ridley, Gary M. Dolny, Christopher Boguslaw Kocon +1 more 2014-08-12
8786010 Superjunction structures for power devices and methods of manufacture Christopher L. Rexer, Jaegil LEE, Hamza Yilmaz, Chongman Yun 2014-07-22
8772868 Superjunction structures for power devices and methods of manufacture Mark L. Rinehimer, Praveen Muraleedharan Shenoy, Hamza Yilmaz, James Pan, Rodney S. Ridley 2014-07-08
8673700 Superjunction structures for power devices and methods of manufacture Mark L. Rinehimer, Praveen Muraleedharan Shenoy 2014-03-18
8564024 Trench-based power semiconductor devices with increased breakdown voltage characteristics Ashok Challa, Daniel M. Kinzer, Dean E. Probst 2013-10-22
8563377 Trench-based power semiconductor devices with increased breakdown voltage characteristics Daniel Calafut, Dean E. Probst 2013-10-22
8502313 Double layer metal (DLM) power MOSFET Rohit Dikshit, Mark L. Rinehimer, Michael D. Gruenhagen, Tracie Petersen, Ritu Sodhi +3 more 2013-08-06
8492837 Reduced process sensitivity of electrode-semiconductor rectifiers Mark L. Rinehimer, Thomas E. Grebs, John L. Benjamin 2013-07-23
8441069 Structure and method for forming trench-gate field effect transistor with source plug Hamza Yilmaz, Daniel Calafut, Christopher Boguslaw Kocon, Steven Sapp, Dean E. Probst +5 more 2013-05-14
8357976 Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device Richard L. Woodin, Christopher L. Rexer, Praveen Muralheedaran Shenoy, Kwanghoon Oh, Chongman Yun 2013-01-22
8304829 Trench-based power semiconductor devices with increased breakdown voltage characteristics Ashok Challa 2012-11-06
8227855 Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same Mark L. Rinehimer, Thomas E. Grebs, John L. Benjamin 2012-07-24
8193581 Trench-based power semiconductor devices with increased breakdown voltage characteristics Dean E. Probst, Ashok Challa, Daniel Calafut 2012-06-05
8174067 Trench-based power semiconductor devices with increased breakdown voltage characteristics Daniel Calafut, Dean E. Probst 2012-05-08
8148749 Trench-shielded semiconductor device Thomas E. Grebs, Mark L. Rinehimer, Dean E. Probst, Gary M. Dolny, John L. Benjamin 2012-04-03
8129245 Methods of manufacturing power semiconductor devices with shield and gate contacts Nathan Kraft, Christopher Boguslaw Kocon, Richard Stokes 2012-03-06
8049276 Reduced process sensitivity of electrode-semiconductor rectifiers Mark L. Rinehimer, Thomas E. Grebs, John L. Benjamin 2011-11-01
8043913 Method of forming trench-gate field effect transistors Hamza Yilmaz, Daniel Calafut, Christopher Boguslaw Kocon, Steven Sapp, Dean E. Probst +5 more 2011-10-25
8013391 Power semiconductor devices with trenched shielded split gate transistor and methods of manufacture Nathan Kraft 2011-09-06
8013387 Power semiconductor devices with shield and gate contacts and methods of manufacture Nathan Kraft, Christopher Boguslaw Kocon, Richard Stokes 2011-09-06
7923776 Trench-gate field effect transistor with channel enhancement region and methods of forming the same Hamza Yilmaz, Daniel Calafut, Christopher Boguslaw Kocon, Steven Sapp, Dean E. Probst +5 more 2011-04-12
7859057 Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device Richard L. Woodin, Christopher L. Rexer, Praveen Muralheedaran Shenoy, Kwanghoon Oh, Chongman Yun 2010-12-28
7595542 Periphery design for charge balance power devices Chanho Park, Christopher Boguslaw Kocon, Jason Higgs, Jaegil LEE 2009-09-29
7586156 Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device Richard L. Woodin, Christopher L. Rexer, Praveen Muraleedharan Shenoy, Kwanghoon Oh, Chongman Yun 2009-09-08