RW

Richard L. Woodin

FS Fairchild Semiconductor: 11 patents #54 of 715Top 8%
ED Extreme Devices: 1 patents #6 of 14Top 45%
🗺 Texas: #12,559 of 125,132 inventorsTop 15%
Overall (All Time): #422,168 of 4,157,543Top 15%
12
Patents All Time

Issued Patents All Time

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDate
8357976 Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device Joseph A. Yedinak, Christopher L. Rexer, Praveen Muralheedaran Shenoy, Kwanghoon Oh, Chongman Yun 2013-01-22
8124981 Rugged semiconductor device architecture Christopher L. Rexer, Gary M. Dolny, Carl Anthony Witt, Joseph Shovlin 2012-02-28
RE42423 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Martin Kordesch, Howard D. Bartlow 2011-06-07
7859057 Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device Joseph A. Yedinak, Christopher L. Rexer, Praveen Muralheedaran Shenoy, Kwanghoon Oh, Chongman Yun 2010-12-28
7638820 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Martin Kordesch, Howard D. Bartlow 2009-12-29
7618884 Method and device with durable contact on silicon carbide William F. Seng, Carl Anthony Witt 2009-11-17
7586156 Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device Joseph A. Yedinak, Christopher L. Rexer, Praveen Muraleedharan Shenoy, Kwanghoon Oh, Chongman Yun 2009-09-08
7411218 Method and device with durable contact on silicon carbide William F. Seng, Carl Anthony Witt 2008-08-12
7411219 Uniform contact William F. Seng 2008-08-12
7132701 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Martin Kordesch, Howard D. Bartlow 2006-11-07
6955978 Uniform contact William F. Seng 2005-10-18
6664721 Gated electron field emitter having an interlayer Keith D. Jamison, Donald E. Patterson, Charlie Hong, Randolph D. Schueller, David Hebert 2003-12-16