| 8384228 |
Package including wires contacting lead frame edge |
William McCalpin, Binh K. Le |
2013-02-26 |
| 8288845 |
Package including proximately-positioned lead frame |
William McCalpin, Michael Lincoln |
2012-10-16 |
| RE42423 |
Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods |
Martin Kordesch, Richard L. Woodin |
2011-06-07 |
| 7638820 |
Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods |
Martin Kordesch, Richard L. Woodin |
2009-12-29 |
| 7132701 |
Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods |
Martin Kordesch, Richard L. Woodin |
2006-11-07 |
| 6548869 |
Voltage limiting protection for high frequency power device |
Kenneth P. Brewer, Johan Darmawan |
2003-04-15 |
| 6525423 |
Semiconductor device package and method of die attach |
— |
2003-02-25 |
| 6297700 |
RF power transistor having cascaded cells with phase matching between cells |
John F. Sevic, Christopher Knorr, James R. Parker |
2001-10-02 |
| 5949649 |
High power semiconductor device having bolt-down ceramic platform |
— |
1999-09-07 |
| 5898198 |
RF power device having voltage controlled linearity |
Francois Herbert, James R. Parker, Daniel Ng |
1999-04-27 |
| 5825088 |
Low thermal resistance semiconductor package and mounting structure |
— |
1998-10-20 |
| 5825089 |
Low thermal resistance spring biased RF semiconductor package mounting structure |
Gregory Valenti, David Sam Piazza |
1998-10-20 |
| 5414296 |
Venetian blind cell layout for RF power transistor |
— |
1995-05-09 |
| 5338974 |
RF power transistor package |
David S. Wisherd |
1994-08-16 |
| 5329156 |
Feed bus for RF power transistors |
— |
1994-07-12 |
| 5027082 |
Solid state RF power amplifier having improved efficiency and reduced distortion |
David S. Wisherd, Pablo E. D'Anna |
1991-06-25 |
| 5023189 |
Method of thermal balancing RF power transistor array |
— |
1991-06-11 |
| 4971929 |
Method of making RF transistor employing dual metallization with self-aligned first metal |
Pablo E. D'Anna |
1990-11-20 |