| 8753943 |
Replacement metal gate transistors with reduced gate oxide leakage |
James Pan |
2014-06-17 |
| 8445975 |
Replacement metal gate transistors with reduced gate oxide leakage |
James Pan |
2013-05-21 |
| 8053849 |
Replacement metal gate transistors with reduced gate oxide leakage |
James Pan |
2011-11-08 |
| 7902599 |
Integrated circuit having long and short channel metal gate devices and method of manufacture |
Richard J. Carter, Michael Hargrove, George J. Kluth |
2011-03-08 |
| 7723192 |
Integrated circuit long and short channel metal gate devices and method of manufacture |
Richard J. Carter, Michael Hargrove, George J. Kluth |
2010-05-25 |
| 7544572 |
Multi-operational mode transistor with multiple-channel device structure |
James Pan |
2009-06-09 |
| 7253484 |
Low-power multiple-channel fully depleted quantum well CMOSFETs |
James Pan, Jon D. Cheek |
2007-08-07 |
| 7223698 |
Method of forming a semiconductor arrangement with reduced field-to active step height |
Douglas J. Bonser, Srikanteswara Dakshina-Murthy, Mark Kelling, Johannes Groschopf, Edward Asuka Nomura |
2007-05-29 |
| 7091118 |
Replacement metal gate transistor with metal-rich silicon layer and method for making the same |
James Pan, Linda Black, Michael P. Chudzik, Rajarao Jammy |
2006-08-15 |
| 7091106 |
Method of reducing STI divot formation during semiconductor device fabrication |
Douglas J. Bonser, Johannes Groschopf, Srikanteswara Dakshina-Murthy, Jon D. Cheek |
2006-08-15 |
| 7074657 |
Low-power multiple-channel fully depleted quantum well CMOSFETs |
James Pan, Jon D. Cheek |
2006-07-11 |
| 6780776 |
Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer |
Wen-Jie Qi, William G. En, Mark W. Michael, Darin A. Chan |
2004-08-24 |
| 6764917 |
SOI device with different silicon thicknesses |
Darin A. Chan, William G. En, Mark W. Michael |
2004-07-20 |
| 6713357 |
Method to reduce parasitic capacitance of MOS transistors |
Hai Hong Wang, Mark W. Michael, Wen-Jie Qi, William G. En |
2004-03-30 |
| 6580122 |
Transistor device having an enhanced width dimension and a method of making same |
Derick J. Wristers, Jon D. Cheek |
2003-06-17 |
| 6406964 |
Method of controlling junction recesses in a semiconductor device |
Derick J. Wristers, Jon D. Cheek |
2002-06-18 |
| 6399493 |
Method of silicide formation by silicon pretreatment |
Robert Dawson, Jon D. Cheek |
2002-06-04 |
| 6317642 |
Apparatus and methods for uniform scan dispensing of spin-on materials |
Lu You, Dawn Hopper, Christof Streck, Richard J. Huang |
2001-11-13 |
| 6228758 |
Method of making dual damascene conductive interconnections and integrated circuit device comprising same |
Thomas Werner |
2001-05-08 |
| 6191030 |
Anti-reflective coating layer for semiconductor device |
Ramkumar Subramanian, Suzette K. Pangrle, Ernesto A. Gallardo |
2001-02-20 |
| 5986344 |
Anti-reflective coating layer for semiconductor device |
Ramkumar Subramanion, Suzette K. Pangrle, Ernesto A. Gallardo |
1999-11-16 |
