Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Replacement metal gate transistors with reduced gate oxide leakage

Replacement metal gate transistors with reduced gate oxide leakage

US Patent 8053849 · Granted Nov 8, 2011

Estimated economic value: $4,445,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Shielded gate trench FET with multiple channels2015
Magnetic dynamic random access nonvolatile semiconductor memory (MRAM)2015
Technique for controlling trench profile in semiconductor structures2014
Superjunction structures for power devices and methods of manufacture2014
Replacement metal gate transistors with reduced gate oxide leakage2014
Replacement metal gate transistors with reduced gate oxide leakage2014
Structure related to a thick bottom dielectric (TBD) for trench-gate devices2014
Structure and method for semiconductor power devices2013
Replacement metal gate transistors with reduced gate oxide leakage2013
Replacement metal gate transistors with reduced gate oxide leakage2013
Shielded gate trench FET with an inter-electrode dielectric having a low-k diele2012
Structure and method for forming planar gate field effect transistor with low re2012