| 9614058 |
Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devices |
Jody A. Fronheiser, Ajey Poovannummoottil Jacob, Kerem Akarvardar |
2017-04-04 |
$12,892,000 |
| 9564367 |
Methods of forming different FinFET devices with different threshold voltages and integrated circuit products containing such devices |
Ajey Poovannummoottil Jacob, Kerem Akarvardar |
2017-02-07 |
$20,132,000 |
| 9508853 |
Channel cladding last process flow for forming a channel region on a FinFET device having a reduced size fin in the channel region |
Ajey Poovannummoottil Jacob, Jody A. Fronheiser |
2016-11-29 |
$4,439,000 |
| 9460924 |
Semiconductor device having structure with fractional dimension of the minimum dimension of a lithography system |
Qi Xiang |
2016-10-04 |
$4,373,000 |
| 9412822 |
Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device |
Xiuyu Cai, Ruilong Xie, Kangguo Cheng, Ali Khakifirooz, Ajey Poovannummoottil Jacob |
2016-08-09 |
$2,792,000 |
| 9362405 |
Channel cladding last process flow for forming a channel region on a FinFET device |
Ajey Poovannummoottil Jacob, Jody A. Fronheiser |
2016-06-07 |
$2,066,000 |
| 9349840 |
Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device |
Xiuyu Cai, Ruilong Xie, Ajey Poovannummoottil Jacob, Kangguo Cheng, Ali Khakifirooz |
2016-05-24 |
$1,910,000 |
| 9240342 |
Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process |
Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Jody A. Fronheiser |
2016-01-19 |
$1,034,000 |
| 9214553 |
Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device |
Xiuyu Cai, Ruilong Xie, Ajey Poovannummoottil Jacob, Kangguo Cheng, Ali Khakifirooz |
2015-12-15 |
$1,367,000 |
| 8859389 |
Methods of making fins and fin field effect transistors (FinFETs) |
Hirohisa Kawasaki, Basker Veeraraghavan, Hemant Adhikari |
2014-10-14 |
|
| 8828839 |
Methods for fabricating electrically-isolated finFET semiconductor devices |
David Paul Brunco |
2014-09-09 |
$2,134,000 |
| 8716074 |
Methods for forming isolated fin structures on bulk semiconductor material |
Hemant Adhikari |
2014-05-06 |
$1,570,000 |
| 8673718 |
Methods of forming FinFET devices with alternative channel materials |
Ajey Poovannummoottil Jacob, Nicholas V. LiCausi, Jody A. Fronheiser, Kerem Akarvardar |
2014-03-18 |
$1,595,000 |
| 8580642 |
Methods of forming FinFET devices with alternative channel materials |
Ajey Poovannummoottil Jacob, Nicholas V. LiCausi, Jody A. Fronheiser, Kerem Akarvardar |
2013-11-12 |
$1,972,000 |
| 8502283 |
Strained fully depleted silicon on insulator semiconductor device |
Qi Xiang, Niraj Subba, Zoran Krivokapic, Ming-Ren Lin |
2013-08-06 |
$2,454,000 |
| 8466034 |
Method of manufacturing a finned semiconductor device structure |
Robert J. Miller |
2013-06-18 |
$4,315,000 |
| 8334177 |
Methods for forming isolated fin structures on bulk semiconductor material |
Hemant Adhikari |
2012-12-18 |
$2,684,000 |
| 8101486 |
Methods for forming isolated fin structures on bulk semiconductor material |
Hemant Adhikari |
2012-01-24 |
$3,915,000 |
| 8084330 |
Thin body semiconductor devices having improved contact resistance and methods for the fabrication thereof |
— |
2011-12-27 |
$7,638,000 |
| 8008136 |
Fully silicided gate structure for FinFET devices |
Ming-Ren Lin, Haihong Wang, Bin Yu |
2011-08-30 |
$4,140,000 |
| 7871873 |
Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor material |
Ming-Ren Lin, Jin Cho, Zoran Krivokapic |
2011-01-18 |
$6,681,000 |
| 7306998 |
Formation of abrupt junctions in devices by using silicide growth dopant snowplow effect |
— |
2007-12-11 |
$6,596,000 |
| 7306997 |
Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor |
Qi Xiang, Niraj Subba, Zoran Krivokapic, Ming-Ren Lin |
2007-12-11 |
$6,596,000 |
| 7298012 |
Shallow junction semiconductor |
Mario M. Pelella, William G. En, Eric N. Paton |
2007-11-20 |
$5,989,000 |
| 7081655 |
Formation of abrupt junctions in devices by using silicide growth dopant snowplow effect |
— |
2006-07-25 |
$22,626,000 |
