WM

Witold P. Maszara

AM AMD: 38 patents #224 of 9,279Top 3%
Globalfoundries: 19 patents #170 of 4,424Top 4%
IBM: 3 patents #26,272 of 70,183Top 40%
AL Alliedsignal: 2 patents #730 of 2,631Top 30%
KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
Overall (All Time): #39,422 of 4,157,543Top 1%
60
Patents All Time

Issued Patents All Time

Showing 25 most recent of 60 patents

Patent #TitleCo-InventorsDate
9614058 Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devices Jody A. Fronheiser, Ajey Poovannummoottil Jacob, Kerem Akarvardar 2017-04-04
9564367 Methods of forming different FinFET devices with different threshold voltages and integrated circuit products containing such devices Ajey Poovannummoottil Jacob, Kerem Akarvardar 2017-02-07
9508853 Channel cladding last process flow for forming a channel region on a FinFET device having a reduced size fin in the channel region Ajey Poovannummoottil Jacob, Jody A. Fronheiser 2016-11-29
9460924 Semiconductor device having structure with fractional dimension of the minimum dimension of a lithography system Qi Xiang 2016-10-04
9412822 Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device Xiuyu Cai, Ruilong Xie, Kangguo Cheng, Ali Khakifirooz, Ajey Poovannummoottil Jacob 2016-08-09
9362405 Channel cladding last process flow for forming a channel region on a FinFET device Ajey Poovannummoottil Jacob, Jody A. Fronheiser 2016-06-07
9349840 Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device Xiuyu Cai, Ruilong Xie, Ajey Poovannummoottil Jacob, Kangguo Cheng, Ali Khakifirooz 2016-05-24
9240342 Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Jody A. Fronheiser 2016-01-19
9214553 Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device Xiuyu Cai, Ruilong Xie, Ajey Poovannummoottil Jacob, Kangguo Cheng, Ali Khakifirooz 2015-12-15
8859389 Methods of making fins and fin field effect transistors (FinFETs) Hirohisa Kawasaki, Basker Veeraraghavan, Hemant Adhikari 2014-10-14
8828839 Methods for fabricating electrically-isolated finFET semiconductor devices David Paul Brunco 2014-09-09
8716074 Methods for forming isolated fin structures on bulk semiconductor material Hemant Adhikari 2014-05-06
8673718 Methods of forming FinFET devices with alternative channel materials Ajey Poovannummoottil Jacob, Nicholas V. LiCausi, Jody A. Fronheiser, Kerem Akarvardar 2014-03-18
8580642 Methods of forming FinFET devices with alternative channel materials Ajey Poovannummoottil Jacob, Nicholas V. LiCausi, Jody A. Fronheiser, Kerem Akarvardar 2013-11-12
8502283 Strained fully depleted silicon on insulator semiconductor device Qi Xiang, Niraj Subba, Zoran Krivokapic, Ming-Ren Lin 2013-08-06
8466034 Method of manufacturing a finned semiconductor device structure Robert J. Miller 2013-06-18
8334177 Methods for forming isolated fin structures on bulk semiconductor material Hemant Adhikari 2012-12-18
8101486 Methods for forming isolated fin structures on bulk semiconductor material Hemant Adhikari 2012-01-24
8084330 Thin body semiconductor devices having improved contact resistance and methods for the fabrication thereof 2011-12-27
8008136 Fully silicided gate structure for FinFET devices Ming-Ren Lin, Haihong Wang, Bin Yu 2011-08-30
7871873 Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor material Ming-Ren Lin, Jin Cho, Zoran Krivokapic 2011-01-18
7306998 Formation of abrupt junctions in devices by using silicide growth dopant snowplow effect 2007-12-11
7306997 Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor Qi Xiang, Niraj Subba, Zoran Krivokapic, Ming-Ren Lin 2007-12-11
7298012 Shallow junction semiconductor Mario M. Pelella, William G. En, Eric N. Paton 2007-11-20
7081655 Formation of abrupt junctions in devices by using silicide growth dopant snowplow effect 2006-07-25