Issued Patents All Time
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11081398 | Method and structure to provide integrated long channel vertical FinFet device | Xusheng Wu | 2021-08-03 |
| 10811422 | Semiconductor recess to epitaxial regions and related integrated circuit structure | Yanping Shen, Wei Hong, Hui Zang | 2020-10-20 |
| 10727067 | Late gate cut using selective conductor deposition | Hui Zang | 2020-07-28 |
| 10497703 | Method, apparatus, and system having super steep retrograde well with silicon and silicon germanium fins | — | 2019-12-03 |
| 10403742 | Field-effect transistors with fins formed by a damascene-like process | Wei Zhao, Haiting Wang, Jiehui Shu, Shesh Mani Pandey, Jinping Liu +1 more | 2019-09-03 |
| 10347541 | Active gate contacts and method of fabrication thereof | Jiehui Shu, Pei Liu, Shariq Siddiqui, Jinping Liu | 2019-07-09 |
| 10325913 | Method, apparatus, and system having super steep retrograde well with engineered dopant profiles | Jeffrey B. Johnson | 2019-06-18 |
| 10325811 | Field-effect transistors with fins having independently-dimensioned sections | Wei Zhao, Haiting Wang | 2019-06-18 |
| 10062612 | Method and system for constructing FINFET devices having a super steep retrograde well | Daniel Jaeger | 2018-08-28 |
| 10014409 | Method and structure to provide integrated long channel vertical FinFET device | Xusheng Wu | 2018-07-03 |
| 10002793 | Sub-fin doping method | Jiehui Shu, Jinping Liu, Baofu Zhu, Shesh Mani Pandey | 2018-06-19 |
| 9953872 | Semiconductor structure with self-aligned wells and multiple channel materials | — | 2018-04-24 |
| 9929159 | Method, apparatus, and system having super steep retrograde well with silicon and silicon germanium fins | — | 2018-03-27 |
| 9911740 | Method, apparatus, and system having super steep retrograde well with engineered dopant profiles | Jeffrey B. Johnson | 2018-03-06 |
| 9793168 | Semiconductor structure with self-aligned wells and multiple channel materials | — | 2017-10-17 |
| 9583557 | Integrated circuits including a MIMCAP device and methods of forming the same for long and controllable reliability lifetime | Lili Cheng, Dina H. Triyoso, Jeasung Park, Robert J. Fox, Sanford Chu | 2017-02-28 |
| 9490123 | Methods of forming strained epitaxial semiconductor material(S) above a strain-relaxed buffer layer | Yi Qi | 2016-11-08 |
| 9299809 | Methods of forming fins for a FinFET device wherein the fins have a high germanium content | — | 2016-03-29 |
| 9257557 | Semiconductor structure with self-aligned wells and multiple channel materials | — | 2016-02-09 |
| 9064702 | Method for manufacturing semiconductor devices | Geert Eneman | 2015-06-23 |
| 9029217 | Band engineered semiconductor device and method for manufacturing thereof | Benjamin Vincent, Geert Hellings | 2015-05-12 |
| 9006705 | Device with strained layer for quantum well confinement and method for manufacturing thereof | Geert Eneman, Geert Hellings | 2015-04-14 |
| 8963225 | Band engineered semiconductor device and method for manufacturing thereof | Benjamin Vincent, Geert Hellings | 2015-02-24 |
| 8828839 | Methods for fabricating electrically-isolated finFET semiconductor devices | Witold P. Maszara | 2014-09-09 |
| 8828826 | Method for manufacturing a transistor device comprising a germanium based channel layer | Liesbeth Witters, Rita Vos, Marcus Johannes Henricus Van Dal | 2014-09-09 |