Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11646200 | Integration of a III-V construction on a group IV substrate | Niamh Waldron, Amey Mahadev Walke, Bernardette Kunert, Yves Mols | 2023-05-09 |
| 11557503 | Method for co-integration of III-V devices with group IV devices | Amey Mahadev Walke | 2023-01-17 |
| 11387350 | Semiconductor fin structure and method of fabricating the same | Geert Eneman, Bartlomiej Jan Pawlak, Geoffrey Pourtois | 2022-07-12 |
| 11355618 | Low parasitic Ccb heterojunction bipolar transistor | Abhitosh Vais, Yves Mols | 2022-06-07 |
| 11195767 | Integration of a III-V device on a Si substrate | Amey Mahadev Walke, Niamh Waldron, Robert S. Langer, Bernardette Kunert | 2021-12-07 |
| 10714595 | Method of forming a semiconductor device comprising at least one germanium nanowire | Kurt Wostyn | 2020-07-14 |
| 10361268 | Internal spacers for nanowire semiconductor devices | Kurt Wostyn, Hans Mertens, Andriy Hikavyy, Naoto Horiguchi | 2019-07-23 |
| 10340139 | Methods and mask structures for substantially defect-free epitaxial growth | Benjamin Vincent, Voon-Yew Thean | 2019-07-02 |
| 10269929 | Internal spacer formation for nanowire semiconductor devices | Kurt Wostyn, Hans Mertens | 2019-04-23 |
| 10090393 | Method for forming a field effect transistor device having an electrical contact | Steven Demuynck, Zheng Tao, Boon Teik Chan, Marc Schaekers, Antony Premkumar Peter +1 more | 2018-10-02 |
| 9972622 | Method for manufacturing a CMOS device and associated device | Anabela Veloso | 2018-05-15 |
| 9842777 | Semiconductor devices comprising multiple channels and method of making same | Kurt Wostyn | 2017-12-12 |
| 9633891 | Method for forming a transistor structure comprising a fin-shaped channel structure | Nadine Collaert, Geert Eneman, Naoto Horiguchi, Min Soo Kim, Rita Rooyackers +1 more | 2017-04-25 |
| 9502415 | Method for providing an NMOS device and a PMOS device on a silicon substrate and silicon substrate comprising an NMOS device and a PMOS device | Roger Loo, Jerome Mitard | 2016-11-22 |
| 9476143 | Methods using mask structures for substantially defect-free epitaxial growth | Benjamin Vincent, Voon-Yew Thean | 2016-10-25 |
| 9478544 | Method for forming a germanium channel layer for an NMOS transistor device, NMOS transistor device and CMOS device | Jerome Mitard, Roger Loo | 2016-10-25 |
| 9343329 | Contact formation in Ge-containing semiconductor devices | Alexey Milenin | 2016-05-17 |
| 9299563 | Method for forming a strained semiconductor structure | Seung Hun Lee, Roger Loo | 2016-03-29 |
| 9123566 | Complementary metal-oxide-semiconductor device comprising silicon and germanium and method for manufacturing thereof | Jerome Mitard | 2015-09-01 |
| 9070712 | Methods for manufacturing a field-effect semiconductor device | — | 2015-06-30 |
| 8828826 | Method for manufacturing a transistor device comprising a germanium based channel layer | Rita Vos, David Paul Brunco, Marcus Johannes Henricus Van Dal | 2014-09-09 |