Issued Patents All Time
Showing 1–25 of 83 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11908917 | Gate structures | Sipeng Gu, Haiting Wang | 2024-02-20 |
| 11721728 | Self-aligned contact | Sipeng Gu, Halting Wang, Yanping Shen | 2023-08-08 |
| 11610965 | Gate cut isolation including air gap, integrated circuit including same and related method | Hong Yu, Hui Zang | 2023-03-21 |
| 11563085 | Transistors with separately-formed source and drain | Baofu Zhu, Haiting Wang, Sipeng Gu | 2023-01-24 |
| 11522068 | IC product comprising an insulating gate separation structure positioned between end surfaces of adjacent gate structures | Chang Seo Park, Shimpei Yamaguchi, Tao Han, Yong Yang, Jinping Liu +1 more | 2022-12-06 |
| 11482456 | Forming two portion spacer after metal gate and contact formation, and related IC structure | Yanping Shen, Hui Zang | 2022-10-25 |
| 11362178 | Asymmetric source drain structures | Rinus Tek Po Lee, Baofu Zhu | 2022-06-14 |
| 11348870 | Electrical fuse formation during a multiple patterning process | Xiaoqiang Zhang, Haizhou Yin, Moosung Chae, Jinping Liu, Hui Zang | 2022-05-31 |
| 11349030 | Methods of forming transistor devices comprising a single semiconductor structure and the resulting devices | Haiting Wang, Hong Yu | 2022-05-31 |
| 11349028 | Semiconductor device with gate cut structure | — | 2022-05-31 |
| 11264382 | Fin-type field effect transistor with reduced fin bulge and method | Bharat Krishnan | 2022-03-01 |
| 11217584 | Limiting lateral epitaxy growth at N-P boundary using inner spacer, and related structure | Judson R. Holt | 2022-01-04 |
| 11177385 | Transistors with a hybrid source or drain | Haiting Wang, Sipeng Gu, Baofu Zhu | 2021-11-16 |
| 11171237 | Middle of line gate structures | Yanping Shen, Halting Wang, Hui Zang | 2021-11-09 |
| 11145716 | Semiconductor devices with low resistance gate structures | Rinus Tek Po Lee | 2021-10-12 |
| 11127834 | Gate structures | Sipeng Gu, Halting Wang | 2021-09-21 |
| 11121023 | FinFET device comprising a single diffusion break with an upper surface that is substantially coplanar with an upper surface of a fin | Hong Yu, Jinping Liu, Hui Zang | 2021-09-14 |
| 11114466 | IC products formed on a substrate having localized regions of high resistivity and methods of making such IC products | Sipeng Gu, Haiting Wang | 2021-09-07 |
| 11094598 | Multiple threshold voltage devices | Bharat Krishnan, Rinus Tek Po Lee, Hyung-yoon Choi | 2021-08-17 |
| 11075298 | LDMOS integrated circuit product | Judson R. Holt, Sipeng Gu, Halting Wang | 2021-07-27 |
| 11075268 | Transistors with separately-formed source and drain | Baofu Zhu, Haiting Wang, Sipeng Gu | 2021-07-27 |
| 11043566 | Semiconductor structures in a wide gate pitch region of semiconductor devices | Judson R. Holt, Sipeng Gu, Haiting Wang | 2021-06-22 |
| 11031389 | Semiconductor structures over active region and methods of forming the structures | Hui Zang | 2021-06-08 |
| 11004953 | Mask-free methods of forming structures in a semiconductor device | Rinus Tek Po Lee, Hui Zang, Hong Yu, Wei Hong | 2021-05-11 |
| 11004748 | Semiconductor devices with wide gate-to-gate spacing | Sipeng Gu, Haiting Wang | 2021-05-11 |