Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11545574 | Single diffusion breaks including stacked dielectric layers | Haiting Wang, Sipeng Gu, Yue Hu | 2023-01-03 |
| 11362178 | Asymmetric source drain structures | Jiehui Shu, Baofu Zhu | 2022-06-14 |
| 11145716 | Semiconductor devices with low resistance gate structures | Jiehui Shu | 2021-10-12 |
| 11094598 | Multiple threshold voltage devices | Bharat Krishnan, Jiehui Shu, Hyung-yoon Choi | 2021-08-17 |
| 11004953 | Mask-free methods of forming structures in a semiconductor device | Hui Zang, Jiehui Shu, Hong Yu, Wei Hong | 2021-05-11 |
| 10896853 | Mask-free methods of forming structures in a semiconductor device | Jiehui Shu, Wei Hong, Hui Zang, Hong Yu | 2021-01-19 |
| 10418365 | Memory array with buried bitlines below vertical field effect transistors of memory cells and a method of forming the memory array | Hui Zang, Jerome Ciavatti | 2019-09-17 |
| 10211045 | Microwave annealing of flowable oxides with trap layers | Rishikesh Krishnan, Joseph K. Kassim, Bharat Krishnan, Joseph F. Shepard, Jr., Yiheng Xu | 2019-02-19 |
| 10204904 | Methods, apparatus and system for vertical finFET device with reduced parasitic capacitance | Hui Zang | 2019-02-12 |
| 10134876 | FinFETs with strained channels and reduced on state resistance | Bharat Krishnan, Timothy J. McArdle, Shishir Ray, Akshey Sehgal | 2018-11-20 |
| 10134739 | Memory array with buried bitlines below vertical field effect transistors of memory cells and a method of forming the memory array | Hui Zang, Jerome Ciavatti | 2018-11-20 |
| 10121706 | Semiconductor structure including two-dimensional and three-dimensional bonding materials | Bharat Krishnan, Hui Zang, Matthew W. Stoker | 2018-11-06 |
| 8829567 | Metal alloy with an abrupt interface to III-V semiconductor | Tae Woo Kim, Man Hoi Wong, Richard J. Hill | 2014-09-09 |
| 7015132 | Forming an electrical contact on an electronic component | Syamal Kumar Lahiri, Zuruzi Bin Abu Samah | 2006-03-21 |