Issued Patents All Time
Showing 1–25 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10756184 | Faceted epitaxial source/drain regions | George R. Mulfinger, Judson R. Holt, Steffen Sichler, Omur Isil Aydin, Wei Hong +3 more | 2020-08-25 |
| 10741556 | Self-aligned sacrificial epitaxial capping for trench silicide | George R. Mulfinger, Lakshmanan H. Vanamurthy, Scott Beasor, Judson R. Holt, Hao Zhang | 2020-08-11 |
| 10680065 | Field-effect transistors with a grown silicon-germanium channel | George R. Mulfinger, Jody A. Fronheiser, El Mehdi Bazizi, Yi Qi | 2020-06-09 |
| 10396078 | Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same | Judson R. Holt, Christopher D. Sheraw, Matthew W. Stoker, Mira Park, George R. Mulfinger +1 more | 2019-08-27 |
| 10388654 | Methods of forming a gate-to-source/drain contact structure | Judson R. Holt, George R. Mulfinger, Thomas Merbeth, Omur Isil Aydin, Ruilong Xie | 2019-08-20 |
| 10326007 | Post gate silicon germanium channel condensation and method for producing the same | George R. Mulfinger, Ryan Sporer, Judson R. Holt | 2019-06-18 |
| 10236343 | Strain retention semiconductor member for channel SiGe layer of pFET | Dina H. Triyoso, Judson R. Holt, Amy L. Child, George R. Mulfinger | 2019-03-19 |
| 10204984 | Methods, apparatus and system for forming increased surface regions within EPI structures for improved trench silicide | Matthew W. Stoker, Judson R. Holt, Annie Levesque | 2019-02-12 |
| 10134876 | FinFETs with strained channels and reduced on state resistance | Bharat Krishnan, Rinus Tek Po Lee, Shishir Ray, Akshey Sehgal | 2018-11-20 |
| 10043893 | Post gate silicon germanium channel condensation and method for producing the same | George R. Mulfinger, Ryan Sporer, Judson R. Holt | 2018-08-07 |
| 10020307 | Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same | Judson R. Holt, Christopher D. Sheraw, Matthew W. Stoker, Mira Park, George R. Mulfinger +1 more | 2018-07-10 |
| 9953873 | Methods of modulating the morphology of epitaxial semiconductor material | Bhupesh Chandra, Claude Ortolland, Gregory G. Freeman, Viorel Ontalus, Christopher D. Sheraw +1 more | 2018-04-24 |
| 9893154 | Recess liner for silicon germanium fin formation | Judson R. Holt, Junli Wang | 2018-02-13 |
| 9882052 | Forming defect-free relaxed SiGe fins | Robert Judson Holt, Jinping Liu, Jody A. Fronheiser, Bharat Krishnan, Churamani Gaire +1 more | 2018-01-30 |
| 9812453 | Self-aligned sacrificial epitaxial capping for trench silicide | George R. Mulfinger, Lakshmanan H. Vanamurthy, Scott Beasor, Judson R. Holt, Hao Zhang | 2017-11-07 |
| 9768288 | Carbon nanostructure device fabrication utilizing protect layers | Jack O. Chu, Christos D. Dimitrakopoulos, Alfred Grill, Dirk Pfeiffer, Katherine L. Saenger +1 more | 2017-09-19 |
| 9722045 | Buffer layer for modulating Vt across devices | Bhupesh Chandra, Viorel Ontalus, Paul Chang, Claude Ortolland, Judson R. Holt | 2017-08-01 |
| 9698226 | Recess liner for silicon germanium fin formation | Judson R. Holt, Junli Wang | 2017-07-04 |
| 9466616 | Uniform junction formation in FinFETs | Eric C. Harley, Judson R. Holt, Yue Ke, Shogo Mochizuki, Alexander Reznicek | 2016-10-11 |
| 9349864 | Methods for selectively forming a layer of increased dopant concentration | Judson R. Holt, Churamani Gaire | 2016-05-24 |
| 9318608 | Uniform junction formation in FinFETs | Eric C. Harley, Judson R. Holt, Yue Ke, Shogo Mochizuki, Alexander Reznicek | 2016-04-19 |
| 9287264 | Epitaxially grown silicon germanium channel FinFET with silicon underlayer | Kangguo Cheng, Eric C. Harley, Judson R. Holt, Gauri Karve, Yue Ke +4 more | 2016-03-15 |
| 9287399 | Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels | Bhupesh Chandra, Paul Chang, Gregory G. Freeman, Dechao Guo, Judson R. Holt +6 more | 2016-03-15 |
| 9236250 | Formation of a graphene layer on a large substrate | Jack O. Chu, Christos D. Dimitrakopoulos, Marcus O. Freitag, Alfred Grill, Robert L. Wisnieff | 2016-01-12 |
| 9236477 | Graphene transistor with a sublithographic channel width | Jack O. Chu, Christos D. Dimitrakopoulos, Eric C. Harley, Judson R. Holt, Matthew W. Stoker | 2016-01-12 |