Issued Patents All Time
Showing 1–25 of 49 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11417759 | Semiconductor device and method for reduced bias threshold instability | Stephen Daley Arthur, Joseph Darryl Michael, Tammy Lynn Johnson, David Alan Lilienfeld, Kevin Sean Matocha +1 more | 2022-08-16 |
| 10680065 | Field-effect transistors with a grown silicon-germanium channel | George R. Mulfinger, Timothy J. McArdle, El Mehdi Bazizi, Yi Qi | 2020-06-09 |
| 10643893 | Surface area and Schottky barrier height engineering for contact trench epitaxy | Shogo Mochizuki, Hiroaki Niimi, Balasubramanian Pranatharthiharan, Mark V. Raymond, Tenko Yamashita | 2020-05-05 |
| 10643894 | Surface area and Schottky barrier height engineering for contact trench epitaxy | Shogo Mochizuki, Hiroaki Niimi, Balasubramanian Pranatharthiharan, Mark V. Raymond, Tenko Yamashita | 2020-05-05 |
| 10367089 | Semiconductor device and method for reduced bias threshold instability | Stephen Daley Arthur, Joseph Darryl Michael, Tammy Lynn Johnson, David Alan Lilienfeld, Kevin Sean Matocha +1 more | 2019-07-30 |
| 10170616 | Methods of forming a vertical transistor device | Ruilong Xie, Steven Bentley | 2019-01-01 |
| 10170617 | Vertical transport field effect transistors | Jiseok Kim, Hiroaki Niimi, Hoon Kim, Puneet Harischandra Suvarna, Steven Bentley | 2019-01-01 |
| 10163677 | Electrically insulated fin structure(s) with alternative channel materials and fabrication methods | Murat Kerem Akarvardar | 2018-12-25 |
| 10032912 | Semiconductor integrated structure having an epitaxial SiGe layer extending from silicon-containing regions formed between segments of oxide regions | Pierre Morin, Kangguo Cheng, Xiuyu Cai, Juntao Li, Shogo Mochizuki +3 more | 2018-07-24 |
| 10026659 | Methods of forming fin isolation regions under tensile-strained fins on FinFET semiconductor devices | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar | 2018-07-17 |
| 9960257 | Common fabrication of multiple FinFETs with different channel heights | Murat Kerem Akarvardar, Ajey Poovannummoottil Jacob | 2018-05-01 |
| 9882052 | Forming defect-free relaxed SiGe fins | Robert Judson Holt, Jinping Liu, Bharat Krishnan, Churamani Gaire, Timothy J. McArdle +1 more | 2018-01-30 |
| 9881830 | Electrically insulated fin structure(s) with alternative channel materials and fabrication methods | Murat Kerem Akarvardar | 2018-01-30 |
| 9716174 | Electrical isolation of FinFET active region by selective oxidation of sacrificial layer | Murat Kerem Akarvardar, Ajey Poovannummoottil Jacob | 2017-07-25 |
| 9679972 | Thin strain relaxed buffers with multilayer film stacks | Murat Kerem Akarvardar, Stephen W. Bedell, Joël KANYANDEKWE | 2017-06-13 |
| 9647086 | Early PTS with buffer for channel doping control | Steven Bentley, Xin Miao, Joseph S. Washington, Pierre Morin | 2017-05-09 |
| 9614058 | Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devices | Ajey Poovannummoottil Jacob, Witold P. Maszara, Kerem Akarvardar | 2017-04-04 |
| 9564486 | Self-aligned dual-height isolation for bulk FinFET | Murat Kerem Akarvardar, Steven Bentley, Kangguo Cheng, Bruce B. Doris, Ajey Poovannummoottil Jacob +2 more | 2017-02-07 |
| 9536990 | Methods of forming replacement fins for a FinFET device using a targeted thickness for the patterned fin etch mask | Murat Kerem Akarvardar, Bruce B. Doris | 2017-01-03 |
| 9530869 | Methods of forming embedded source/drain regions on finFET devices | Murat Kerem Akarvardar, Steven Bentley | 2016-12-27 |
| 9508853 | Channel cladding last process flow for forming a channel region on a FinFET device having a reduced size fin in the channel region | Ajey Poovannummoottil Jacob, Witold P. Maszara | 2016-11-29 |
| 9508848 | Methods of forming strained channel regions on FinFET devices by performing a heating process on a heat-expandable material | Murat Kerem Akarvardar | 2016-11-29 |
| 9502507 | Methods of forming strained channel regions on FinFET devices | Murat Kerem Akarvardar | 2016-11-22 |
| 9478663 | FinFET device including a uniform silicon alloy fin | Ajey Poovannummoottil Jacob, Yi Qi, Sylvie Mignot | 2016-10-25 |
| 9455140 | Methods of forming doped epitaxial SiGe material on semiconductor devices | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar | 2016-09-27 |