JF

Jody A. Fronheiser

Globalfoundries: 42 patents #54 of 4,424Top 2%
IBM: 11 patents #9,995 of 70,183Top 15%
GE: 7 patents #4,929 of 36,430Top 15%
RE Renesas Electronics: 2 patents #1,855 of 4,529Top 45%
SS Stmicroelectronics Sa: 2 patents #601 of 1,676Top 40%
📍 Delmar, NY: #5 of 170 inventorsTop 3%
🗺 New York: #1,918 of 115,490 inventorsTop 2%
Overall (All Time): #56,420 of 4,157,543Top 2%
49
Patents All Time

Issued Patents All Time

Showing 26–49 of 49 patents

Patent #TitleCo-InventorsDate
9406803 FinFET device including a uniform silicon alloy fin Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Steven Bentley 2016-08-02
9362405 Channel cladding last process flow for forming a channel region on a FinFET device Ajey Poovannummoottil Jacob, Witold P. Maszara 2016-06-07
9343300 Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel region Ajey Poovannummoottil Jacob, Michael Hargrove, Murat Kerem Akarvardar 2016-05-17
9337022 Virtual relaxed substrate on edge-relaxed composite semiconductor pillars Murat Kerem Akarvardar, Bruce B. Doris 2016-05-10
9324790 Self-aligned dual-height isolation for bulk FinFET Murat Kerem Akarvardar, Steven Bentley, Kangguo Cheng, Bruce B. Doris, Ajey Poovannummoottil Jacob +2 more 2016-04-26
9324618 Methods of forming replacement fins for a FinFET device Murat Kerem Akarvardar, Bruce B. Doris 2016-04-26
9245980 Methods of forming substantially defect-free, fully-strained silicon-germanium fins for a FinFET semiconductor device Murat Kerem Akarvardar, Ajey Poovannummoottil Jacob 2016-01-26
9240342 Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Witold P. Maszara 2016-01-19
9236452 Raised source/drain EPI with suppressed lateral EPI overgrowth Kwan-Yong Lim, Christopher M. Prindle 2016-01-12
9224865 FinFET with insulator under channel Murat Kerem Akarvardar, Ajey Poovannummoottil Jacob 2015-12-29
9190411 Retrograde doped layer for device isolation Ajey Poovannummoottil Jacob, Steven Bentley, Murat Kerem Akarvardar, Kangguo Cheng, Bruce B. Doris +2 more 2015-11-17
9165767 Semiconductor structure with increased space and volume between shaped epitaxial structures Bharat Krishnan, Jinping Liu, Bongki Lee 2015-10-20
9165837 Method to form defect free replacement fins by H2 anneal Murat Kerem Akarvardar, Ajey Poovannummoottil Jacob, Steven Bentley 2015-10-20
9117875 Methods of forming isolated germanium-containing fins for a FinFET semiconductor device Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Kangguo Cheng, Bruce B. Doris, Kern Rim 2015-08-25
8853019 Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process Jeremy A. Wahl, Kerem Akarvardar, Ajey Poovannummoottil Jacob, Daniel T. Pham 2014-10-07
8815685 Methods for fabricating integrated circuits having confined epitaxial growth regions Nicholas V. LiCausi, Errol Todd Ryan 2014-08-26
8728885 Methods of forming a three-dimensional semiconductor device with a nanowire channel structure Daniel T. Pham, William J. Taylor, Jr. 2014-05-20
8673718 Methods of forming FinFET devices with alternative channel materials Witold P. Maszara, Ajey Poovannummoottil Jacob, Nicholas V. LiCausi, Kerem Akarvardar 2014-03-18
8580642 Methods of forming FinFET devices with alternative channel materials Witold P. Maszara, Ajey Poovannummoottil Jacob, Nicholas V. LiCausi, Kerem Akarvardar 2013-11-12
8198650 Semiconductor devices and systems Stanislav Ivanovich Soloviev, Ho Young Cha, Peter Micah Sandvik, Alexey Vert 2012-06-12
7906427 Dimension profiling of SiC devices Peter Micah Sandvik, Kevin Sean Matocha, Vinayak Tilak 2011-03-15
7850941 Nanostructure arrays and methods for forming same Loucas Tsakalakos, Bastiaan Arie Korevaar, Joleyn Eileen Balch, Reed Roeder Corderman, Fred Sharifi +1 more 2010-12-14
7691711 Method for fabricating silicon carbide vertical MOSFET devices Zachary Matthew Stum, Kevin Sean Matocha, Ljubisa Dragoljub Stevanovic 2010-04-06
7595241 Method for fabricating silicon carbide vertical MOSFET devices Kevin Sean Matocha, Larry Rowland, Jesse Berkley Tucker, Stephen Daley Arthur, Zachary Matthew Stum 2009-09-29