JW

Jeremy A. Wahl

Globalfoundries: 22 patents #130 of 4,424Top 3%
PF Plastic Omnium New Energies France: 1 patents #8 of 18Top 45%
SL Spansion Llc.: 1 patents #435 of 769Top 60%
📍 Delmar, NY: #11 of 170 inventorsTop 7%
🗺 New York: #5,468 of 115,490 inventorsTop 5%
Overall (All Time): #172,293 of 4,157,543Top 5%
24
Patents All Time

Issued Patents All Time

Showing 1–24 of 24 patents

Patent #TitleCo-InventorsDate
11506338 Internal casing for pressurized fluid storage tank for a motor vehicle Bjorn Criel, Pierre De Keyzer 2022-11-22
10707119 Interconnect structures with airgaps and dielectric-capped interconnects Nicholas V. LiCausi, Vimal Kamineni 2020-07-07
10395981 Semiconductor device including a leveling dielectric fill material Hans-Peter Moll 2019-08-27
10049944 Method of manufacturing selective nanostructures into finFET process flow Scott Beasor 2018-08-14
9875936 Spacer defined fin growth and differential fin width Ryan Sporer, Rohit Pal 2018-01-23
9660075 Integrated circuits with dual silicide contacts and methods for fabricating same Shao-Ming Koh, Guillaume Bouche, Andy Wei 2017-05-23
9634143 Methods of forming FinFET devices with substantially undoped channel regions Ryan Sporer 2017-04-25
9570344 Method to protect MOL metallization from hardmask strip process Vimal Kamineni, Nicholas V. LiCausi, Shariq Siddiqui 2017-02-14
9508712 Semiconductor device with a multiple nanowire channel structure and methods of variably connecting such nanowires for current density modulation Nicholas V. LiCausi 2016-11-29
9293462 Integrated circuits with dual silicide contacts and methods for fabricating same Shao-Ming Koh, Guillaume Bouche, Andy Wei 2016-03-22
9196694 Integrated circuits with dual silicide contacts and methods for fabricating same Guillaume Bouche, Shao-Ming Koh, Andy Wei 2015-11-24
9177805 Integrated circuits with metal-insulator-semiconductor (MIS) contact structures and methods for fabricating same Guillaume Bouche, Shao-Ming Koh, Andy Wei 2015-11-03
8969207 Methods of forming a masking layer for patterning underlying structures Gerard Schmid, Richard A. Farrell, Chanro Park 2015-03-03
8963255 Strained silicon carbide channel for electron mobility of NMOS Kingsuk Maitra 2015-02-24
8906802 Methods of forming trench/via features in an underlying structure using a process that includes a masking layer formed by a directed self-assembly process Gerard Schmid, Richard A. Farrell, Chanro Park 2014-12-09
8853019 Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process Jody A. Fronheiser, Kerem Akarvardar, Ajey Poovannummoottil Jacob, Daniel T. Pham 2014-10-07
8846511 Methods of trimming nanowire structures Nicholas V. LiCausi 2014-09-30
8759904 Electronic device having plural FIN-FETs with different FIN heights and planar FETs on the same substrate Kingsuk Maitra 2014-06-24
8722482 Strained silicon carbide channel for electron mobility of NMOS Kingsuk Maitra 2014-05-13
8691640 Methods of forming dielectrically isolated fins for a FinFET semiconductor by performing an etching process wherein the etch rate is modified via inclusion of a dopant material Nicholas V. LiCausi 2014-04-08
8481410 Methods of epitaxial FinFET Nicholas V. LiCausi 2013-07-09
8476137 Methods of FinFET height control Nicholas V. LiCausi 2013-07-02
8460984 FIN-FET device and method and integrated circuits using such Kingsuk Maitra 2013-06-11
7998846 3-D integrated circuit system and method Eunha Kim, Shenqing Fang, Youseok Suh, Kuo-Tung Chang, Yi Ma +2 more 2011-08-16