Pierre Morin — 78 Patents | Patent Leaderboard

Pierre Morin has been granted 78 US patents. The first was granted in 2003 and the most recent in September 2025. Pierre Morin ranks #23,712 of 4,157,543 US inventors in our database (top 0.57%). Patent records list Pierre Morin in Woluwe-Saint-Pierre - Sint-Pieters-Woluwe, NY, BE.

Issued Patents All Time

Showing 1–25 of 78 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
12428749	Template for growing a crystal of a two-dimensional material	Yuanyuan Shi, Benjamin Groven, Vladislav Voronenkov	2025-09-30
12232435	Chip containing an onboard non-volatile memory comprising a phase-change material	Franck Arnaud, David Galpin, Stephane Zoll, Olivier Hinsinger, Laurent Favennec +5 more	2025-02-18
12211936	Strained-channel fin FETs	Nicolas Loubet	2025-01-28
12191309	Method to induce strain in finFET channels from an adjacent region	Nicolas Loubet	2025-01-07
11948943	Method to induce strain in FINFET channels from an adjacent region	Nicolas Loubet	2024-04-02
11854803	Gate spacer patterning	Boon Teik Chan, Antony Premkumar Peter	2023-12-26
11688811	Transistor comprising a channel placed under shear strain and fabrication process	Emmanuel Augendre, Maxime Argoud, Sylvain Maitrejean, Raluca Tiron	2023-06-27
11653582	Chip containing an onboard non-volatile memory comprising a phase-change material	Franck Arnaud, David Galpin, Stephane Zoll, Olivier Hinsinger, Laurent Favennec +5 more	2023-05-16	$29,428,000
11587928	Method to induce strain in finFET channels from an adjacent region	Nicolas Loubet	2023-02-21
11569384	Method to induce strain in 3-D microfabricated structures	Nicolas Loubet	2023-01-31	$67,221,000
11302812	Semiconductor device with fin and related methods	Nicolas Loubet	2022-04-12	$26,568,000
11264286	Co-integration of tensile silicon and compressive silicon germanium	Nicolas Loubet, Yann Mignot	2022-03-01	$20,861,000
11133331	Integrated tensile strained silicon NFET and compressive strained silicon-germanium PFET implemented in FinFET technology	Qing Liu	2021-09-28	$30,299,000
10978594	Transistor comprising a channel placed under shear strain and fabrication process	Emmanuel Augendre, Maxime Argoud, Sylvain Maitrejean, Raluca Tiron	2021-04-13
10903423	Phase change memory	Michel Haond, Paola Zuliani	2021-01-26	$23,954,000
10854606	Method to induce strain in finFET channels from an adjacent region	Nicolas Loubet	2020-12-01	$40,707,000
10854750	Semiconductor device with fin and related methods	Nicolas Loubet	2020-12-01	$40,707,000
10847654	Method to induce strain in 3-D microfabricated structures	Nicolas Loubet	2020-11-24	$37,546,000
10665497	Method of manufacturing a structure having one or several strained semiconducting zones that may for transistor channel regions	Emmanuel Augendre, Nicolas Loubet, Sylvain Maitrejean	2020-05-26
10658578	Memory cell comprising a phase-change material	Didier Dutartre	2020-05-19	$14,292,000
10600786	Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor	Sylvain Maitrejean, Emmanuel Augendre, Shay Reboh	2020-03-24
10515965	Method to induce strain in finFET channels from an adjacent region	Nicolas Loubet	2019-12-24	$51,545,000
10510955	Phase change memory	Michel Haond, Paola Zuliani	2019-12-17	$33,776,000
10505043	Semiconductor device with fin and related methods	Nicolas Loubet	2019-12-10	$11,136,000
10483393	Method to induce strain in 3-D microfabricated structures	Nicolas Loubet	2019-11-19	$8,778,000

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Pierre Morin — 78 Patents

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