| 11081583 |
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
Judson R. Holt, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo |
2021-08-03 |
$4,187,000 |
| 10615279 |
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
Judson R. Holt, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo |
2020-04-07 |
$1,846,000 |
| 10243077 |
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
Judson R. Holt, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo |
2019-03-26 |
$2,148,000 |
| 9917190 |
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
Judson R. Holt, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo |
2018-03-13 |
$2,527,000 |
| 9752251 |
Self-limiting selective epitaxy process for preventing merger of semiconductor fins |
Kevin K. Chan, Yue Ke, Annie Levesque |
2017-09-05 |
$2,785,000 |
| 9577099 |
Diamond shaped source drain epitaxy with underlying buffer layer |
Veeraraghavan S. Basker, Yue Ke, Alexander Reznicek, Henry K. Utomo |
2017-02-21 |
$8,671,000 |
| 9577100 |
FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions |
Kangguo Cheng, Michael P. Chudzik, Judson R. Holt, Yue Ke, Rishikesh Krishnan +2 more |
2017-02-21 |
$8,671,000 |
| 9536985 |
Epitaxial growth of material on source/drain regions of FinFET structure |
Michael P. Chudzik, Brian J. Greene, Judson R. Holt, Yue Ke, Rishikesh Krishnan +2 more |
2017-01-03 |
$6,197,000 |
| 9466616 |
Uniform junction formation in FinFETs |
Judson R. Holt, Yue Ke, Timothy J. McArdle, Shogo Mochizuki, Alexander Reznicek |
2016-10-11 |
$4,519,000 |
| 9412843 |
Method for embedded diamond-shaped stress element |
Judson R. Holt, Jin Z. Wallner, Thomas A. Wallner |
2016-08-09 |
$4,722,000 |
| 9390884 |
Method of inspecting a semiconductor substrate |
Oliver D. Patterson, Kevin T. Wu |
2016-07-12 |
$2,207,000 |
| 9318608 |
Uniform junction formation in FinFETs |
Judson R. Holt, Yue Ke, Timothy J. McArdle, Shogo Mochizuki, Alexander Reznicek |
2016-04-19 |
$757,000 |
| 9312364 |
finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
Judson R. Holt, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo |
2016-04-12 |
$2,843,000 |
| 9287264 |
Epitaxially grown silicon germanium channel FinFET with silicon underlayer |
Kangguo Cheng, Judson R. Holt, Gauri Karve, Yue Ke, Derrick Liu +4 more |
2016-03-15 |
$907,000 |
| 9246003 |
FINFET structures with fins recessed beneath the gate |
Kangguo Cheng, Yue Ke, Ali Khakifirooz, Alexander Reznicek |
2016-01-26 |
$652,000 |
| 9236477 |
Graphene transistor with a sublithographic channel width |
Jack O. Chu, Christos D. Dimitrakopoulos, Judson R. Holt, Timothy J. McArdle, Matthew W. Stoker |
2016-01-12 |
$510,000 |
| 9219114 |
Partial FIN on oxide for improved electrical isolation of raised active regions |
Kangguo Cheng, Terence B. Hook, Ali Khakifirooz, Henry K. Utomo, Reinaldo Vega |
2015-12-22 |
$977,000 |
| 9123826 |
Single crystal source-drain merged by polycrystalline material |
Judson R. Holt, Yue Ke, Rishikesh Krishnan, Timothy J. McArdle, Alexander Reznicek +1 more |
2015-09-01 |
$3,766,000 |
| 8987093 |
Multigate finFETs with epitaxially-grown merged source/drains |
Judson R. Holt, Alexander Reznicek, Thomas N. Adam |
2015-03-24 |
$3,177,000 |
| 8716037 |
Measurement of CMOS device channel strain by X-ray diffraction |
Thomas N. Adam, Stephen W. Bedell, Judson R. Holt, Anita Madan, Conal E. Murray +1 more |
2014-05-06 |
$5,370,000 |
| 8618617 |
Field effect transistor device |
Kevin K. Chan, Abhishek Dube, Judson R. Holt, Viorel Ontalus, Kathryn T. Schonenberg +3 more |
2013-12-31 |
|
| 8492234 |
Field effect transistor device |
Kevin K. Chan, Abhishek Dube, Judson R. Holt, Viorel Ontalus, Kathryn T. Schonenberg +3 more |
2013-07-23 |
|
| 8361859 |
Stressed transistor with improved metastability |
Thomas N. Adam, Stephen W. Bedell, Abhishek Dube, Judson R. Holt, Alexander Reznicek +4 more |
2013-01-29 |
$3,874,000 |
| 8232186 |
Methods of integrating reverse eSiGe on NFET and SiGe channel on PFET, and related structure |
Judson R. Holt, Dominic J. Schepis, Michael D. Steigerwalt, Linda Black, Rick Carter |
2012-07-31 |
|
| 8084788 |
Method of forming source and drain of a field-effect-transistor and structure thereof |
Judson R. Holt, Abhishek Dube, Shwu-Jen Jeng, Jeremy J. Kempisty, Hasan M. Nayfeh +1 more |
2011-12-27 |
$5,499,000 |
