Issued Patents All Time
Showing 25 most recent of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11081583 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Judson R. Holt, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo | 2021-08-03 |
| 10615279 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Judson R. Holt, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo | 2020-04-07 |
| 10243077 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Judson R. Holt, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo | 2019-03-26 |
| 9917190 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Judson R. Holt, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo | 2018-03-13 |
| 9752251 | Self-limiting selective epitaxy process for preventing merger of semiconductor fins | Kevin K. Chan, Yue Ke, Annie Levesque | 2017-09-05 |
| 9577099 | Diamond shaped source drain epitaxy with underlying buffer layer | Veeraraghavan S. Basker, Yue Ke, Alexander Reznicek, Henry K. Utomo | 2017-02-21 |
| 9577100 | FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions | Kangguo Cheng, Michael P. Chudzik, Judson R. Holt, Yue Ke, Rishikesh Krishnan +2 more | 2017-02-21 |
| 9536985 | Epitaxial growth of material on source/drain regions of FinFET structure | Michael P. Chudzik, Brian J. Greene, Judson R. Holt, Yue Ke, Rishikesh Krishnan +2 more | 2017-01-03 |
| 9466616 | Uniform junction formation in FinFETs | Judson R. Holt, Yue Ke, Timothy J. McArdle, Shogo Mochizuki, Alexander Reznicek | 2016-10-11 |
| 9412843 | Method for embedded diamond-shaped stress element | Judson R. Holt, Jin Z. Wallner, Thomas A. Wallner | 2016-08-09 |
| 9390884 | Method of inspecting a semiconductor substrate | Oliver D. Patterson, Kevin T. Wu | 2016-07-12 |
| 9318608 | Uniform junction formation in FinFETs | Judson R. Holt, Yue Ke, Timothy J. McArdle, Shogo Mochizuki, Alexander Reznicek | 2016-04-19 |
| 9312364 | finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Judson R. Holt, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo | 2016-04-12 |
| 9287264 | Epitaxially grown silicon germanium channel FinFET with silicon underlayer | Kangguo Cheng, Judson R. Holt, Gauri Karve, Yue Ke, Derrick Liu +4 more | 2016-03-15 |
| 9246003 | FINFET structures with fins recessed beneath the gate | Kangguo Cheng, Yue Ke, Ali Khakifirooz, Alexander Reznicek | 2016-01-26 |
| 9236477 | Graphene transistor with a sublithographic channel width | Jack O. Chu, Christos D. Dimitrakopoulos, Judson R. Holt, Timothy J. McArdle, Matthew W. Stoker | 2016-01-12 |
| 9219114 | Partial FIN on oxide for improved electrical isolation of raised active regions | Kangguo Cheng, Terence B. Hook, Ali Khakifirooz, Henry K. Utomo, Reinaldo Vega | 2015-12-22 |
| 9123826 | Single crystal source-drain merged by polycrystalline material | Judson R. Holt, Yue Ke, Rishikesh Krishnan, Timothy J. McArdle, Alexander Reznicek +1 more | 2015-09-01 |
| 8987093 | Multigate finFETs with epitaxially-grown merged source/drains | Judson R. Holt, Alexander Reznicek, Thomas N. Adam | 2015-03-24 |
| 8716037 | Measurement of CMOS device channel strain by X-ray diffraction | Thomas N. Adam, Stephen W. Bedell, Judson R. Holt, Anita Madan, Conal E. Murray +1 more | 2014-05-06 |
| 8618617 | Field effect transistor device | Kevin K. Chan, Abhishek Dube, Judson R. Holt, Viorel Ontalus, Kathryn T. Schonenberg +3 more | 2013-12-31 |
| 8492234 | Field effect transistor device | Kevin K. Chan, Abhishek Dube, Judson R. Holt, Viorel Ontalus, Kathryn T. Schonenberg +3 more | 2013-07-23 |
| 8361859 | Stressed transistor with improved metastability | Thomas N. Adam, Stephen W. Bedell, Abhishek Dube, Judson R. Holt, Alexander Reznicek +4 more | 2013-01-29 |
| 8232186 | Methods of integrating reverse eSiGe on NFET and SiGe channel on PFET, and related structure | Judson R. Holt, Dominic J. Schepis, Michael D. Steigerwalt, Linda Black, Rick Carter | 2012-07-31 |
| 8084788 | Method of forming source and drain of a field-effect-transistor and structure thereof | Judson R. Holt, Abhishek Dube, Shwu-Jen Jeng, Jeremy J. Kempisty, Hasan M. Nayfeh +1 more | 2011-12-27 |