Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Epitaxial growth of material on source/drain regions of FinFET structure

Epitaxial growth of material on source/drain regions of FinFET structure

US Patent 9536985 · Granted Jan 3, 2017

Estimated economic value: $6,197,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electronically programmable fuse with heating transistors2025
Substrate-less lateral diode integrated circuit structures2025
Integrated circuit structures having differentiated channel sizing2025
Lateral phototransistor2025
Semiconductor-on-insulator field-effect transistors including stress-inducing co2025
Dipole threshold voltage tuning for high voltage transistor stacks2025
IC device with vertically-graded silicon germanium region adjacent device channe2025
Lateral bipolar transistors2025
Lateral bipolar transistors with gate structure aligned to extrinsic base2025
Lateral bipolar transistor with gated collector2025
Substrate-less silicon controlled rectifier (SCR) integrated circuit structures2025
Substrate-free integrated circuit structures2025