Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of integrating reverse eSiGe on NFET and SiGe channel on PFET, and related structure

Methods of integrating reverse eSiGe on NFET and SiGe channel on PFET, and related structure

US Patent 8232186 · Granted Jul 31, 2012

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electronically programmable fuse with heating transistors2025
Uterine-derived regenerative cell compositions and uses thereof2025
Lateral phototransistor2025
Semiconductor-on-insulator field-effect transistors including stress-inducing co2025
IC device with vertically-graded silicon germanium region adjacent device channe2025
Lateral bipolar transistors2025
Lateral bipolar transistors with gate structure aligned to extrinsic base2025
Lateral bipolar transistor with gated collector2025
Electro-absorption modulators with stacked waveguide tapers2025
Uterine-derived regenerative cell compositions and uses thereof2025
Bipolar transistor structure on semiconductor fin and methods to form same2024
Lateral bipolar transistor2024