WM

Witold P. Maszara

AM AMD: 38 patents #224 of 9,279Top 3%
Globalfoundries: 19 patents #170 of 4,424Top 4%
IBM: 3 patents #26,272 of 70,183Top 40%
AL Alliedsignal: 2 patents #730 of 2,631Top 30%
KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
🗺 California: #5,800 of 386,348 inventorsTop 2%
Overall (All Time): #39,422 of 4,157,543Top 1%
60
Patents All Time

Issued Patents All Time

Showing 26–50 of 60 patents

Patent #TitleCo-InventorsDate
7078299 Formation of finFET using a sidewall epitaxial layer Jung-Suk Goo, James Pan, Qi Xiang 2006-07-18
7033916 Shallow junction semiconductor and method for the fabrication thereof Mario M. Pelella, William G. En, Eric N. Paton 2006-04-25
6955969 Method of growing as a channel region to reduce source/drain junction capacitance Ihsan Djomehri, Jung-Suk Goo, Srinath Krishnan, James Pan, Qi Xiang 2005-10-18
6933579 Semiconductor solid phase epitaxy damage control method and integrated circuit produced thereby William G. En, Mario M. Pelella 2005-08-23
6873030 Metal gate electrode using silicidation and method of formation thereof Zoran Krivokapic 2005-03-29
6872644 Semiconductor device with non-compounded contacts, and method of making Matthew S. Buynoski 2005-03-29
6830987 Semiconductor device with a silicon-on-void structure and method of making the same Mario Pelella, Srinath Krishnan, William G. En 2004-12-14
6815297 Ultra-thin fully depleted SOI device and method of fabrication Zoran Krivokapic 2004-11-09
6812550 Wafer pattern variation of integrated circuit fabrication William G. En, Eric N. Paton, Mario M. Pelella 2004-11-02
6787436 Silicide-silicon contacts for reduction of MOSFET source-drain resistances Matthew S. Buynoski 2004-09-07
6727149 Method of making a hybrid SOI device that suppresses floating body effects Srinath Krishnan, Zoran Krivokapic 2004-04-27
6680240 Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide 2004-01-20
6630720 Asymmetric semiconductor device having dual work function gate and method of fabrication Haihong Wang, Qi Xiang 2003-10-07
6599831 Metal gate electrode using silicidation and method of formation thereof Zoran Krivokapic 2003-07-29
6586808 Semiconductor device having multi-work function gate electrode and multi-segment gate dielectric Qi Xiang, Haihong Wang 2003-07-01
6541821 SOI device with source/drain extensions and adjacent shallow pockets Srinath Krishnan, Zoran Krivokapic 2003-04-01
6506654 Source-side stacking fault body-tie for partially-depleted SOI MOSFET hysteresis control Andy Wei, Mario M. Pelella 2003-01-14
6495887 Argon implantation after silicidation for improved floating-body effects Srinath Krishnan, Matthew S. Buynoski 2002-12-17
6492209 Selectively thin silicon film for creating fully and partially depleted SOI on same wafer Srinath Krishnan, Matthew S. Buynoski 2002-12-10
6486038 Method for and device having STI using partial etch trench bottom liner Ming-Ren Lin, Qi Xiang 2002-11-26
6465847 Semiconductor-on-insulator (SOI) device with hyperabrupt source/drain junctions Srinath Krishnan 2002-10-15
6444534 SOI semiconductor device opening implantation gettering method 2002-09-03
6429054 Method of fabricating semiconductor-on-insulator (SOI) device with hyperabrupt source/drain junctions Srinath Krishnan 2002-08-06
6399452 Method of fabricating transistors with low thermal budget Srinath Krishnan 2002-06-04
6362063 Formation of low thermal budget shallow abrupt junctions for semiconductor devices Srinath Krishnan, Shekhar Pramanick 2002-03-26