Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor with tensile strained substrate and method of making the same

Semiconductor with tensile strained substrate and method of making the same

US Patent 7001837 · Granted Feb 21, 2006

Estimated economic value: $12,668,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Adaptive throttling in a universal backup host2025
Display substrate, method for driving the same and display panel2024
Metal oxide varistor with reinforced electrodes2024
Adaptive throttling in a universal backup host2024
Contacts for semiconductor devices2023
Adaptive throttling in a universal backup host2022
Correlated electron material (CEM) devices with contact region sidewall insulati2021
Contacts for semiconductor devices2021
Formation of correlated electron material (CEM) devices with restored sidewall r2020
Method for fabrication of a CEM device2020
Fabrication of correlated electron material (CEM) devices2020
Method for fabrication of a CEM device2020