Issued Patents All Time
Showing 25 most recent of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12431900 | Input buffer with hysteresis-integrated voltage protection devices and receiver incorporating the input buffer | Dzung T. Tran, Deepti Pant | 2025-09-30 |
| 11368155 | Low power power-up reset output driver | Dzung T. Tran | 2022-06-21 |
| 9759764 | Controlling the latchup effect | Chuan Lin, Dong-Hyuk Ju, Imran Khan, Jun-Kyu Kang | 2017-09-12 |
| 9142513 | Middle-of-the-line constructs using diffusion contact structures | Mahbub Rashed, Yuansheng Ma, Irene Y. Lin, Jason E. Stephens, Yunfei Deng +5 more | 2015-09-22 |
| 9006100 | Middle-of-the-line constructs using diffusion contact structures | Mahbub Rashed, Yuansheng Ma, Irene Y. Lin, Jason E. Stephens, Yunfei Deng +5 more | 2015-04-14 |
| 8912014 | Controlling the latchup effect | Chuan Lin, Dong-Hyuk Ju, Imran Khan, Jun-Kyu Kang | 2014-12-16 |
| 8536011 | Junction leakage suppression in memory devices | Jun-Kyu Kang, Hsiao-Han Thio, Imran Khan, Dong-Hyuk Ju, Chuan Lin | 2013-09-17 |
| 8217450 | Double-gate semiconductor device with gate contacts formed adjacent sidewalls of a fin | Bin Yu, Haihong Wang | 2012-07-10 |
| 7939440 | Junction leakage suppression in memory devices | Jun-Kyu Kang, Hsiao-Han Thio, Imran Khan, Dong-Hyuk Ju, Chuan Lin | 2011-05-10 |
| 7541267 | Reversed T-shaped finfet | Haihong Wang, Ming-Ren Lin, Bin Yu | 2009-06-02 |
| 7498225 | Systems and methods for forming multiple fin structures using metal-induced-crystallization | Haihong Wang, Ming-Ren Lin, Bin Yu | 2009-03-03 |
| 7432558 | Formation of semiconductor devices to achieve <100> channel orientation | Judy Xilin An, Srikanteswara Dakshina-Murthy, Cyrus E. Tabery, Bin Yu | 2008-10-07 |
| 7262104 | Selective channel implantation for forming semiconductor devices with different threshold voltages | Haihong Wang, Bin Yu | 2007-08-28 |
| 7256455 | Double gate semiconductor device having a metal gate | Haihong Wang, Bin Yu | 2007-08-14 |
| 7250645 | Reversed T-shaped FinFET | Haihong Wang, Ming-Ren Lin, Bin Yu | 2007-07-31 |
| 7186599 | Narrow-body damascene tri-gate FinFET | Haihong Wang, Bin Yu | 2007-03-06 |
| 7179692 | Method of manufacturing a semiconductor device having a fin structure | Bin Yu, Judy Xilin An, Srikanteswara Dakshina-Murthy, Zoran Krivokapic, Haihong Wang | 2007-02-20 |
| 7125776 | Multi-step chemical mechanical polishing of a gate area in a FinFET | Krishnashree Achuthan, Haihong Wang, Bin Yu | 2006-10-24 |
| 7095065 | Varying carrier mobility in semiconductor devices to achieve overall design goals | Bin Yu, Haihong Wang | 2006-08-22 |
| 7091068 | Planarizing sacrificial oxide to improve gate critical dimension in semiconductor devices | Cyrus E. Tabery, Bin Yu | 2006-08-15 |
| 7084018 | Sacrificial oxide for minimizing box undercut in damascene FinFET | Bin Yu | 2006-08-01 |
| 7041542 | Damascene tri-gate FinFET | Haihong Wang, Bin Yu | 2006-05-09 |
| 7034361 | Narrow body raised source/drain metal gate MOSFET | Bin Yu, Haihong Wang | 2006-04-25 |
| 7029959 | Source and drain protection and stringer-free gate formation in semiconductor devices | Chih-Yuh Yang, Srikanteswara Dakshina-Murhty, Cyrus E. Tabery, Bin Yu | 2006-04-18 |
| 7029958 | Self aligned damascene gate | Cyrus E. Tabery, Matthew S. Buynoski, Srikanteswara Dakshina-Murthy, Zoran Krivokapic, Haihong Wang +2 more | 2006-04-18 |