| 12431900 |
Input buffer with hysteresis-integrated voltage protection devices and receiver incorporating the input buffer |
Dzung T. Tran, Deepti Pant |
2025-09-30 |
|
| 11368155 |
Low power power-up reset output driver |
Dzung T. Tran |
2022-06-21 |
$49,607,000 |
| 9759764 |
Controlling the latchup effect |
Chuan Lin, Dong-Hyuk Ju, Imran Khan, Jun-Kyu Kang |
2017-09-12 |
$16,269,000 |
| 9142513 |
Middle-of-the-line constructs using diffusion contact structures |
Mahbub Rashed, Yuansheng Ma, Irene Y. Lin, Jason E. Stephens, Yunfei Deng +5 more |
2015-09-22 |
$916,000 |
| 9006100 |
Middle-of-the-line constructs using diffusion contact structures |
Mahbub Rashed, Yuansheng Ma, Irene Y. Lin, Jason E. Stephens, Yunfei Deng +5 more |
2015-04-14 |
$1,171,000 |
| 8912014 |
Controlling the latchup effect |
Chuan Lin, Dong-Hyuk Ju, Imran Khan, Jun-Kyu Kang |
2014-12-16 |
$7,113,000 |
| 8536011 |
Junction leakage suppression in memory devices |
Jun-Kyu Kang, Hsiao-Han Thio, Imran Khan, Dong-Hyuk Ju, Chuan Lin |
2013-09-17 |
$1,035,000 |
| 8217450 |
Double-gate semiconductor device with gate contacts formed adjacent sidewalls of a fin |
Bin Yu, Haihong Wang |
2012-07-10 |
$3,144,000 |
| 7939440 |
Junction leakage suppression in memory devices |
Jun-Kyu Kang, Hsiao-Han Thio, Imran Khan, Dong-Hyuk Ju, Chuan Lin |
2011-05-10 |
$2,266,000 |
| 7541267 |
Reversed T-shaped finfet |
Haihong Wang, Ming-Ren Lin, Bin Yu |
2009-06-02 |
$11,563,000 |
| 7498225 |
Systems and methods for forming multiple fin structures using metal-induced-crystallization |
Haihong Wang, Ming-Ren Lin, Bin Yu |
2009-03-03 |
$22,696,000 |
| 7432558 |
Formation of semiconductor devices to achieve <100> channel orientation |
Judy Xilin An, Srikanteswara Dakshina-Murthy, Cyrus E. Tabery, Bin Yu |
2008-10-07 |
$7,530,000 |
| 7262104 |
Selective channel implantation for forming semiconductor devices with different threshold voltages |
Haihong Wang, Bin Yu |
2007-08-28 |
$7,142,000 |
| 7256455 |
Double gate semiconductor device having a metal gate |
Haihong Wang, Bin Yu |
2007-08-14 |
$3,919,000 |
| 7250645 |
Reversed T-shaped FinFET |
Haihong Wang, Ming-Ren Lin, Bin Yu |
2007-07-31 |
$9,995,000 |
| 7186599 |
Narrow-body damascene tri-gate FinFET |
Haihong Wang, Bin Yu |
2007-03-06 |
$9,465,000 |
| 7179692 |
Method of manufacturing a semiconductor device having a fin structure |
Bin Yu, Judy Xilin An, Srikanteswara Dakshina-Murthy, Zoran Krivokapic, Haihong Wang |
2007-02-20 |
$8,070,000 |
| 7125776 |
Multi-step chemical mechanical polishing of a gate area in a FinFET |
Krishnashree Achuthan, Haihong Wang, Bin Yu |
2006-10-24 |
$12,982,000 |
| 7095065 |
Varying carrier mobility in semiconductor devices to achieve overall design goals |
Bin Yu, Haihong Wang |
2006-08-22 |
$21,650,000 |
| 7091068 |
Planarizing sacrificial oxide to improve gate critical dimension in semiconductor devices |
Cyrus E. Tabery, Bin Yu |
2006-08-15 |
$18,169,000 |
| 7084018 |
Sacrificial oxide for minimizing box undercut in damascene FinFET |
Bin Yu |
2006-08-01 |
$12,952,000 |
| 7041542 |
Damascene tri-gate FinFET |
Haihong Wang, Bin Yu |
2006-05-09 |
$10,311,000 |
| 7034361 |
Narrow body raised source/drain metal gate MOSFET |
Bin Yu, Haihong Wang |
2006-04-25 |
$9,950,000 |
| 7029959 |
Source and drain protection and stringer-free gate formation in semiconductor devices |
Chih-Yuh Yang, Srikanteswara Dakshina-Murhty, Cyrus E. Tabery, Bin Yu |
2006-04-18 |
$11,889,000 |
| 7029958 |
Self aligned damascene gate |
Cyrus E. Tabery, Matthew S. Buynoski, Srikanteswara Dakshina-Murthy, Zoran Krivokapic, Haihong Wang +2 more |
2006-04-18 |
$11,889,000 |
