Carl Robert Huster — 18 Patents at AMD

Carl Robert Huster has been granted 18 US patents while listed as an inventor at AMD. The first was granted in 2001 and the most recent in December 2003. Carl Robert Huster ranks #245,716 of 4,157,543 US inventors in our database (top 5.9%). Patent records list Carl Robert Huster in Sunnyvale, CA, US.

Issued Patents All Time

Showing 1–18 of 18 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
6667512	Asymmetric retrograde halo metal-oxide-semiconductor field-effect transistor (MOSFET)	Concetta Riccobene	2003-12-23	$5,236,000
6548335	Selective epitaxy to reduce gate/gate dielectric interface roughness	Concetta Riccobene, Scott Luning	2003-04-15	$2,272,000
6531347	Method of making recessed source drains to reduce fringing capacitance	Judy Xilin An, Richard P. Rouse	2003-03-11	$2,325,000
6518072	Deposited screen oxide for reducing gate edge lifting	Daniel Sobek, Timothy Thurgate, Sameer Haddad	2003-02-11	$2,033,000
6487121	Method of programming a non-volatile memory cell using a vertical electric field	Timothy Thurgate	2002-11-26	$2,975,000
6426279	Epitaxial delta doping for retrograde channel profile	Emi Ishida	2002-07-30	$3,277,000
6395606	MOSFET with metal in gate for reduced gate resistance	Ognjen Milic-Strkalj, Emi Ishida	2002-05-28	$2,985,000
6396103	Optimized single side pocket implant location for a field effect transistor	Concetta Riccobene	2002-05-28	$2,985,000
6391767	Dual silicide process to reduce gate resistance	Concetta Riccobene, Wei Long	2002-05-21	$2,063,000
6337246	Method for inhibiting tunnel oxide growth at the edges of a floating gate during semiconductor device processing	Daniel Sobek, Timothy Thurgate, Tuan Pham, Mark T. Ramsbey, Sameer Haddad	2002-01-08	$11,293,000
6329687	Two bit flash cell with two floating gate regions	Daniel Sobek, Timothy Thurgate, Masaaki Higashitani	2001-12-11	$6,262,000
6329273	Solid-source doping for source/drain to eliminate implant damage	Timothy Thurgate	2001-12-11	$6,262,000
6268624	Method for inhibiting tunnel oxide growth at the edges of a floating gate during semiconductor device processing	Daniel Sobek, Timothy Thurgate, Tuan Pham, Mark T. Ramsbey, Sameer Haddad	2001-07-31	$5,560,000
6255165	Nitride plug to reduce gate edge lifting	Timothy Thurgate, Daniel Sobek	2001-07-03	$7,468,000
6242329	Method for manufacturing asymmetric channel transistor	Concetta Riccobene, Richard P. Rouse, Donald L. Wollesen	2001-06-05	$7,807,000
6238978	Use of etch to blunt gate corners	—	2001-05-29	$6,079,000
6229198	Non-uniform gate doping for reduced overlap capacitance	Effiong Ibok	2001-05-08	$6,632,000
6225229	Removable photoresist spacers in CMOS transistor fabrication	—	2001-05-01	$7,851,000

Carl Robert Huster — 18 Patents

Issued Patents All Time

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