| 12406729 |
Non-volatile memory with inter-die connection |
Shiqian Shao, Fumiaki Toyama |
2025-09-02 |
|
| 11973044 |
Non-volatile memory with efficient signal routing |
Shiqian Shao, Fumiaki Toyama |
2024-04-30 |
|
| 10950352 |
System, computer-readable storage medium and method of deep learning of texture in short time series |
— |
2021-03-16 |
|
| 10679723 |
Direct memory characterization using periphery transistors |
Dong-Kyu Lee, Kelvin Yih-Yuh Doong, Klaus Schuegraf, Christoph Dolainsky, Huan-Tsung Huang +1 more |
2020-06-09 |
$4,625,000 |
| 10283566 |
Three-dimensional memory device with through-stack contact via structures and method of making thereof |
Jongsun Sel, Mitsuteru Mushiga, Yoshihiro Ikeda, Daewung Kang, Akio Nishida |
2019-05-07 |
|
| 10224373 |
Three-dimensional ReRAM memory device employing replacement word lines and methods of making the same |
Jongsun Sel, Mitsuteru Mushiga, Vincent Shih, Akio Nishida |
2019-03-05 |
|
| 10115770 |
Methods and apparatus for three-dimensional nonvolatile memory |
Jongsun Sel, Daewung Kang, Michiaki Sano, Yohei Yamada, Mitsuteru Mushiga |
2018-10-30 |
|
| 10103161 |
Offset backside contact via structures for a three-dimensional memory device |
Fumitoshi Ito, Masaaki Higashitani, Cheng-Chung Chu, Jayavel Pachamuthu |
2018-10-16 |
|
| 10014316 |
Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof |
Fabo Yu, Jayavel Pachamuthu, Jongsun Sel, Cheng-Chung Chu, Yao-Sheng Lee +3 more |
2018-07-03 |
|
| 9917093 |
Inter-plane offset in backside contact via structures for a three-dimensional memory device |
Cheng-Chung Chu, Jayavel Pachamuthu, Fumitoshi Ito, Masaaki Higashitani |
2018-03-13 |
|
| 9842851 |
Three-dimensional memory devices having a shaped epitaxial channel portion |
Jayavel Pachamuthu |
2017-12-12 |
|
| 9768270 |
Method of selectively depositing floating gate material in a memory device |
Marika Gunji-Yoneoka, Atsushi Suyama, Kensuke Yamaguchi, Hiroyuki Kinoshita, Raghuveer S. Makala +2 more |
2017-09-19 |
|
| 9711522 |
Memory hole structure in three dimensional memory |
Chan Park, Jong-Sun Sel |
2017-07-18 |
|
| 9659956 |
Three-dimensional memory device containing source select gate electrodes with enhanced electrical isolation |
Jayavel Pachamuthu, Henry Chien |
2017-05-23 |
|
| 9613806 |
Triple patterning NAND flash memory |
Jongsun Sel, Mun-Pyo Hong |
2017-04-04 |
|
| 9601508 |
Blocking oxide in memory opening integration scheme for three-dimensional memory structure |
Jongsun Sel, Chan Park, Atsushi Suyama, Frank Yu, Hiroyuki Ogawa +6 more |
2017-03-21 |
|
| 9460958 |
Air gap isolation in non-volatile memory |
Vinod R. Purayath, Hiroyuki Kinoshita |
2016-10-04 |
|
| 9379120 |
Metal control gate structures and air gap isolation in non-volatile memory |
Vinod R. Purayath, Hiroyuki Kinoshita, Yuan Zhang, Henry Chin, James Kai +3 more |
2016-06-28 |
|
| 9337085 |
Air gap formation between bit lines with side protection |
Jong-Sun Sel, Marika Gunji-Yoneoka, Naoki Takeguchi, Chan Park, Kazuya Tokunaga |
2016-05-10 |
$20,573,000 |
| 9330969 |
Air gap formation between bit lines with top protection |
Jong-Sun Sel, Marika Gunji-Yoneoka, Naoki Takeguchi, Chan Park, Kazuya Tokunaga |
2016-05-03 |
$7,737,000 |
| 9224221 |
Arranged display of data associated with a set of time periods |
Andreas Vogel, Lauren McMullen, Simon Lee |
2015-12-29 |
$754,000 |
| 9224475 |
Structures and methods for making NAND flash memory |
Jongsun Sel, Kazuya Tokunaga, Hiro Kinoshita |
2015-12-29 |
$9,346,000 |
| 9153595 |
Methods of making word lines and select lines in NAND flash memory |
Jongsun Sel, Kazuya Tokunaga |
2015-10-06 |
$12,155,000 |
| 9129854 |
Full metal gate replacement process for NAND flash memory |
Kazuya Tokunaga, Jongsun Sel, Marika Gunji-Yoneoka |
2015-09-08 |
$14,280,000 |
| 9099532 |
Processes for NAND flash memory fabrication |
Jongsun Sel |
2015-08-04 |
$10,535,000 |
