Issued Patents All Time
Showing 25 most recent of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12414296 | Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement | Yusuke Mukae, Yujin Terasawa, Tatsuya Hinoue, Ramy Nashed Bassely Said | 2025-09-09 |
| 12382638 | Three-dimensional memory device and method of making thereof using double pitch word line formation | Masanori Tsutsumi, Seiji Shimabukuro, Tatsuya Hinoue | 2025-08-05 |
| 12217965 | Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant | Fei Zhou, Rahul Sharangpani, Raghuveer S. Makala, Yujin Terasawa, Kensuke Yamaguchi +1 more | 2025-02-04 |
| 12185540 | Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement | Michiaki Sano, Yusuke Mukae, Yujin Terasawa, Tatsuya Hinoue, Ramy Nashed Bassely Said | 2024-12-31 |
| 12176203 | Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant | Fei Zhou, Rahul Sharangpani, Raghuveer S. Makala, Yujin Terasawa, Kensuke Yamaguchi +1 more | 2024-12-24 |
| 12046285 | Three-dimensional memory device and method of making thereof using double pitch word line formation | Masanori Tsutsumi, Seiji Shimabukuro, Tatsuya Hinoue | 2024-07-23 |
| 11942429 | Three-dimensional memory device and method of making thereof using double pitch word line formation | Tatsuya Hinoue, Masanori Tsutsumi, Seiji Shimabukuro | 2024-03-26 |
| 11377733 | Fluorine-free tungsten deposition process employing in-situ oxidation and apparatuses for effecting the same | Fei Zhou, Raghuveer S. Makala, Rahul Sharangpani, Yusuke Mukae | 2022-07-05 |
| 10916504 | Three-dimensional memory device including electrically conductive layers with molybdenum-containing liners | Yusuke Mukae, Kensuke Yamaguchi, Raghuveer S. Makala, Yujin Terasawa | 2021-02-09 |
| 10616984 | LED lighting device and luminaire | Shigeru Ido, Hiroshi Kido | 2020-04-07 |
| 10608010 | Three-dimensional memory device containing replacement contact via structures and method of making the same | Yujin Terasawa, Genta Mizuno, Yusuke Mukae, Yoshinobu Tanaka, Shiori Kataoka +2 more | 2020-03-31 |
| 10381372 | Selective tungsten growth for word lines of a three-dimensional memory device | Fumitaka Amano, Takashi Arai, Genta Mizuno, Shigehisa Inoue, Takashi HAMAYA | 2019-08-13 |
| 10128261 | Cobalt-containing conductive layers for control gate electrodes in a memory structure | Raghuveer S. Makala, Rahul Sharangpani, Sateesh Koka, Genta Mizuno, Senaka Kanakamedala +3 more | 2018-11-13 |
| 9887240 | Method of fabricating memory array having divided apart bit lines and partially divided bit line selector switches | Seiji Shimabukuro, Teruyuki Mine, Hiroyuki Ogawa | 2018-02-06 |
| 9818798 | Vertical thin film transistors in non-volatile storage systems | Hiroaki Iuchi | 2017-11-14 |
| 9728499 | Set of stepped surfaces formation for a multilevel interconnect structure | Seiji Shimabukuro, Hiroaki Iuchi, Michiaki Sano | 2017-08-08 |
| 9608043 | Method of operating memory array having divided apart bit lines and partially divided bit line selector switches | Seiji Shimabukuro, Teruyuki Mine, Hiroyuki Ogawa | 2017-03-28 |
| 9601508 | Blocking oxide in memory opening integration scheme for three-dimensional memory structure | Jongsun Sel, Chan Park, Atsushi Suyama, Frank Yu, Hiroyuki Ogawa +6 more | 2017-03-21 |
| 9401279 | Transistor gate and process for making transistor gate | — | 2016-07-26 |
| 9362338 | Vertical thin film transistors in non-volatile storage systems | Hiroaki Iuchi | 2016-06-07 |
| 9356074 | Memory array having divided apart bit lines and partially divided bit line selector switches | Seiji Shimabukuro, Teruyuki Mine, Hiroyuki Ogawa | 2016-05-31 |
| 9337085 | Air gap formation between bit lines with side protection | Jong-Sun Sel, Marika Gunji-Yoneoka, Chan Park, Tuan Pham, Kazuya Tokunaga | 2016-05-10 |
| 9334578 | Electroplating apparatus and method with uniformity improvement | — | 2016-05-10 |
| 9330969 | Air gap formation between bit lines with top protection | Jong-Sun Sel, Marika Gunji-Yoneoka, Chan Park, Tuan Pham, Kazuya Tokunaga | 2016-05-03 |
| 9281384 | Ultraviolet blocking structure and method for semiconductor device | — | 2016-03-08 |