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Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant |
Fei Zhou, Rahul Sharangpani, Raghuveer S. Makala, Yujin Terasawa, Naoki Takeguchi +1 more |
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Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant |
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2024-12-24 |
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Three-dimensional memory device including electrically conductive layers with molybdenum-containing liners |
Yusuke Mukae, Naoki Takeguchi, Raghuveer S. Makala, Yujin Terasawa |
2021-02-09 |
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Three-dimensional memory device containing replacement contact via structures and method of making the same |
Yujin Terasawa, Genta Mizuno, Yusuke Mukae, Yoshinobu Tanaka, Shiori Kataoka +2 more |
2020-03-31 |
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Three-dimensional memory device containing offset column stairs and method of making the same |
Seiji Shimabukuro |
2020-01-28 |
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Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openings |
Mitsuteru Mushiga, Hisakazu Otoi, James Kai, Zhixin Cui, Murshed Chowdhury +2 more |
2019-11-26 |
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Multi-tier memory device with through-stack peripheral contact via structures and method of making thereof |
Jixin Yu, Zhenyu Lu, Hiroyuki Ogawa, Daxin Mao, Sung-Tae Lee +2 more |
2019-04-23 |
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Within-array through-memory-level via structures and method of making thereof |
Jixin Yu, Zhenyu Lu, Alexander Chu, Hiroyuki Ogawa, Daxin Mao +2 more |
2019-04-02 |
| 10141331 |
Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereof |
Hiromasa Susuki, Masanori Tsutsumi, Shigehisa Inoue, Junji Oh, Seiji Shimabukuro +3 more |
2018-11-27 |
| 10014316 |
Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof |
Fabo Yu, Jayavel Pachamuthu, Jongsun Sel, Tuan Pham, Cheng-Chung Chu +3 more |
2018-07-03 |
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Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device |
Jixin Yu, Kento KITAMURA, Tong Zhang, Chun Ge, Yanli Zhang +6 more |
2018-06-26 |
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Method of selectively depositing floating gate material in a memory device |
Marika Gunji-Yoneoka, Atsushi Suyama, Hiroyuki Kinoshita, Raghuveer S. Makala, Rahul Sharangpani +2 more |
2017-09-19 |
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Forming 3D memory cells after word line replacement |
Zhenyu Lu, Hiro Kinoshita, Daxin Mao, Johann Alsmeier, Wenguang Shi +3 more |
2017-07-25 |
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Blocking oxide in memory opening integration scheme for three-dimensional memory structure |
Jongsun Sel, Chan Park, Atsushi Suyama, Frank Yu, Hiroyuki Ogawa +6 more |
2017-03-21 |
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Selective floating gate semiconductor material deposition in a three-dimensional memory structure |
Hiroyuki Kamiya |
2017-01-24 |
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Method for forming oxide below control gate in vertical channel thin film transistor |
Michiaki Sano, Akira Nakada, Naohito Yanagida |
2016-06-14 |
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Bottom recess process for an outer blocking dielectric layer inside a memory opening |
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2016-04-05 |
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Method for drying washed objects |
Yoshinori Ishikawa, Ki Myung Han |
2005-06-07 |
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Apparatus and method for drying washed objects |
Yoshinori Ishikawa, Ki Myung Han |
2004-08-24 |