Issued Patents All Time
Showing 1–25 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11552094 | Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same | James Kai, Masaaki Higashitani, Johann Alsmeier | 2023-01-10 |
| 11195857 | Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer | James Kai, Ching-Huang Lu, Johann Alsmeier | 2021-12-07 |
| 11127729 | Method for removing a bulk substrate from a bonded assembly of wafers | James Kai, Koichi Matsuno, Johann Alsmeier | 2021-09-21 |
| 11018153 | Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes | James Kai, Johann Alsmeier | 2021-05-25 |
| 10985169 | Three-dimensional device with bonded structures including a support die and methods of making the same | James Kai, Koichi Matsuno, Johann Alsmeier | 2021-04-20 |
| 10950626 | Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes | James Kai, Johann Alsmeier, Raiden Matsuno | 2021-03-16 |
| 10840260 | Through-array conductive via structures for a three-dimensional memory device and methods of making the same | James Kai, Fumiaki Toyama, Johann Alsmeier, Masaaki Higashitani | 2020-11-17 |
| 10777570 | Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same | Tadashi Nakamura, Jin Liu, Kazuya Tokunaga, Marika Gunji-Yoneoka, Matthias Baenninger +2 more | 2020-09-15 |
| 10748894 | Three-dimensional memory device containing bond pad-based power supply network for a source line and methods of making the same | Kwang Ho Kim, James Kai, Johann Alsmeier | 2020-08-18 |
| 10727216 | Method for removing a bulk substrate from a bonded assembly of wafers | James Kai, Koichi Matsuno, Johann Alsmeier | 2020-07-28 |
| 10672907 | Channel region dopant control in fin field effect transistor | Brian J. Greene, Arvind Kumar | 2020-06-02 |
| 10629616 | Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer | James Kai, Ching-Huang Lu, Johann Alsmeier | 2020-04-21 |
| 10515897 | Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same | Masatoshi Nishikawa, Akio Nishida, Takahito Fujita, Kiyokazu Shishido, Hiroyuki Ogawa | 2019-12-24 |
| 10490569 | Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openings | Mitsuteru Mushiga, Hisakazu Otoi, Kensuke Yamaguchi, James Kai, Zhixin Cui +2 more | 2019-11-26 |
| 10490568 | Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof | James Kai, Jin Liu, Johann Alsmeier | 2019-11-26 |
| 10461163 | Three-dimensional memory device with thickened word lines in terrace region and method of making thereof | Senaka Kanakamedala, Yoshihiro Kanno, Raghuveer S. Makala, Yanli Zhang, Jin Liu +1 more | 2019-10-29 |
| 10453854 | Three-dimensional memory device with thickened word lines in terrace region | Yoshihiro Kanno, Senaka Kanakamedala, Raghuveer S. Makala, Yanli Zhang, Jin Liu | 2019-10-22 |
| 10388666 | Concurrent formation of memory openings and contact openings for a three-dimensional memory device | James Kai, Zhixin Cui, Johann Alsmeier, Tong Zhang | 2019-08-20 |
| 10355009 | Concurrent formation of memory openings and contact openings for a three-dimensional memory device | James Kai, Zhixin Cui, Johann Alsmeier, Tong Zhang | 2019-07-16 |
| 10262945 | Three-dimensional array device having a metal containing barrier and method of making thereof | Raghuveer S. Makala, Keerti Shukla, Tomohisa Abe, Yao-Sheng Lee, James Kai | 2019-04-16 |
| 10224104 | Three dimensional NAND memory device with common bit line for multiple NAND strings in each memory block | Jin Liu, Yanli Zhang, Andrew Lin, Raghuveer S. Makala, Johann Alsmeier | 2019-03-05 |
| 10224407 | High voltage field effect transistor with laterally extended gate dielectric and method of making thereof | Andrew Lin, James Kai, Yanli Zhang, Johann Alsmeier | 2019-03-05 |
| 10121794 | Three-dimensional memory device having epitaxial germanium-containing vertical channel and method of making thereof | Marika Gunji-Yoneoka, Atsushi Suyama, Jayavel Pachamuthu, Tsuyoshi Hada, Daewung Kang +4 more | 2018-11-06 |
| 9991167 | Method and IC structure for increasing pitch between gates | Arvind Kumar, Brian J. Greene, Chung-Hsun Lin | 2018-06-05 |
| 9991280 | Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same | Tadashi Nakamura, Jin Liu, Kazuya Tokunaga, Marika Gunji-Yoneoka, Matthias Baenninger +6 more | 2018-06-05 |