| 10361213 |
Three dimensional memory device containing multilayer wordline barrier films and method of making thereof |
Rahul Sharangpani, Fumitaka Amano, Raghuveer S. Makala, Fei Zhou |
2019-07-23 |
| 10355139 |
Three-dimensional memory device with amorphous barrier layer and method of making thereof |
Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Somesh Peri |
2019-07-16 |
| 10262945 |
Three-dimensional array device having a metal containing barrier and method of making thereof |
Raghuveer S. Makala, Murshed Chowdhury, Tomohisa Abe, Yao-Sheng Lee, James Kai |
2019-04-16 |
| 9984963 |
Cobalt-containing conductive layers for control gate electrodes in a memory structure |
Somesh Peri, Rahul Sharangpani, Raghuveer S. Makala, Senaka Kanakamedala |
2018-05-29 |
| 9960180 |
Three-dimensional memory device with partially discrete charge storage regions and method of making thereof |
Fei Zhou, Raghuveer S. Makala, Rahul Sharangpani, Yanli Zhang, Peng Zhang |
2018-05-01 |
| 9875929 |
Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereof |
Raghuveer S. Makala, Rahul Sharangpani, Fei Zhou |
2018-01-23 |
| 9812463 |
Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof |
Rahul Sharangpani, Raghuveer S. Makala, Senaka Kanakamedala, Fei Zhou, Somesh Peri +4 more |
2017-11-07 |
| 9793139 |
Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word lines |
Rahul Sharangpani, Raghuveer S. Makala, Somesh Peri, Yao-Sheng Lee |
2017-10-17 |