Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10777570 | Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same | Tadashi Nakamura, Kazuya Tokunaga, Marika Gunji-Yoneoka, Matthias Baenninger, Hiroyuki Kinoshita +2 more | 2020-09-15 |
| 10734070 | Programming selection devices in non-volatile memory strings | Xiang Yang, Dengtao Zhao, Huai-Yuan Tseng, Deepanshu Dutta, Zhongguang Xu +1 more | 2020-08-04 |
| 10490568 | Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof | James Kai, Murshed Chowdhury, Johann Alsmeier | 2019-11-26 |
| 10475891 | Reliable non-volatile memory device | Fan Zhang, Lai Qiang Luo, Xin Cai, Eugene Yu Jin Kong, Zhiqiang Teo +1 more | 2019-11-12 |
| 10461163 | Three-dimensional memory device with thickened word lines in terrace region and method of making thereof | Senaka Kanakamedala, Yoshihiro Kanno, Raghuveer S. Makala, Yanli Zhang, Murshed Chowdhury +1 more | 2019-10-29 |
| 10453854 | Three-dimensional memory device with thickened word lines in terrace region | Yoshihiro Kanno, Senaka Kanakamedala, Raghuveer S. Makala, Yanli Zhang, Murshed Chowdhury | 2019-10-22 |
| 10224104 | Three dimensional NAND memory device with common bit line for multiple NAND strings in each memory block | Murshed Chowdhury, Yanli Zhang, Andrew Lin, Raghuveer S. Makala, Johann Alsmeier | 2019-03-05 |
| 10115736 | Methods and apparatus for three-dimensional NAND non-volatile memory devices with side source line and mechanical support | Chun Ge, Johann Alsmeier | 2018-10-30 |
| 10038006 | Through-memory-level via structures for a three-dimensional memory device | Yoko Furihata, Jixin Yu, Hiroyuki Ogawa, James Kai, Johann Alsmeier | 2018-07-31 |
| 9991280 | Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same | Tadashi Nakamura, Kazuya Tokunaga, Marika Gunji-Yoneoka, Matthias Baenninger, Hiroyuki Kinoshita +6 more | 2018-06-05 |
| 9972641 | Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof | Yanli Zhang, Raghuveer S. Makala, Murshed Chowdhury, Johann Alsmeier | 2018-05-15 |
| 9972640 | Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof | James Kai, Murshed Chowdhury, Johann Alsmeier | 2018-05-15 |
| 9917100 | Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same | Tong Zhang, Johann Alsmeier, James Kai, Yanli Zhang | 2018-03-13 |
| 9831266 | Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same | James Kai, Johann Alsmeier, Yanli Zhang | 2017-11-28 |
| 9818693 | Through-memory-level via structures for a three-dimensional memory device | Fumiaki Toyama, Hiroyuki Ogawa, Yoko Furihata, James Kai, Yuki Mizutani +2 more | 2017-11-14 |
| 9818759 | Through-memory-level via structures for a three-dimensional memory device | James Kai, Johann Alsmeier, Jixin Yu, Yoko Furihata, Hiroyuki Ogawa | 2017-11-14 |
| 9799670 | Three dimensional NAND device containing dielectric pillars for a buried source line and method of making thereof | Masatoshi Nishikawa, Chun Ge, Yanli Zhang | 2017-10-24 |
| 9780112 | Methods and apparatus for three-dimensional NAND non-volatile memory devices with side source line and mechanical support | Chun Ge, Johann Alsmeier | 2017-10-03 |
| 9698153 | Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad | Yanli Zhang, Murshed Chowdhury, Raghuveer S. Makala, Johann Alsmeier | 2017-07-04 |
| 9627403 | Multilevel memory stack structure employing support pillar structures | Tong Zhang, Jayavel Pachamuthu, Yao-Sheng Lee, Johann Alsmeier | 2017-04-18 |
| 9576975 | Monolithic three-dimensional NAND strings and methods of fabrication thereof | Yanli Zhang, James Kai, Raghuveer S. Makala, Murshed Chowdhury, Camilla Huang +1 more | 2017-02-21 |
| 9570463 | Multilevel memory stack structure with joint electrode having a collar portion and methods for manufacturing the same | Yanli Zhang, Raghuveer S. Makala, Murshed Chowdhury, Yao-Sheng Lee, Johann Alsmeier | 2017-02-14 |
| 9397111 | Select gate transistor with single crystal silicon for three-dimensional memory | Murshed Chowdhury, Yanli Zhang, Raghuveer S. Makala, Johann Alsmeier | 2016-07-19 |