Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426354 | Field effect transistors with reduced gate fringe area and method of making the same | Takahito Fujita, Hiroyuki Ogawa | 2025-09-23 |
| 12032837 | Non-volatile memory with reduced word line switch area | Yuki Mizutani, Kazutaka Yoshizawa, Eiichi Fujikura | 2024-07-09 |
| 11876096 | Field effect transistors with reduced gate fringe area and method of making the same | Takahito Fujita, Hiroyuki Ogawa | 2024-01-16 |
| 11710740 | Field effect transistors with reduced gate fringe area and method of making the same | Takahito Fujita, Hiroyuki Ogawa | 2023-07-25 |
| 11069707 | Variable die size memory device and methods of manufacturing the same | Tomoka Tanabe, Hiroyuki Ogawa, Takahito Fujita | 2021-07-20 |
| 10804284 | Three-dimensional memory device containing bidirectional taper staircases and methods of making the same | Yasushi Ishii, Jun Akaiwa, Hiroyuki Ogawa | 2020-10-13 |
| 10770459 | CMOS devices containing asymmetric contact via structures | Dai Iwata, Yasushi Ishii, Hiroshi Nakatsuji, Hiroyuki Ogawa | 2020-09-08 |
| 10515907 | Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same | Takahito Fujita, Hiroyuki Ogawa | 2019-12-24 |
| 10515897 | Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same | Masatoshi Nishikawa, Akio Nishida, Murshed Chowdhury, Takahito Fujita, Hiroyuki Ogawa | 2019-12-24 |
| 10355017 | CMOS devices containing asymmetric contact via structures and method of making the same | Hiroshi Nakatsuji, Hiroyuki Ogawa | 2019-07-16 |
| 10256099 | Transistors having semiconductor-metal composite gate electrodes containing different thickness interfacial dielectrics and methods of making thereof | Jun Akaiwa, Hiroyuki Ogawa | 2019-04-09 |
| 9607997 | Metal line with increased inter-metal breakdown voltage | Katsuo Yamada, Yuji Takahashi, Noritaka Fukuo, Masami Uozaki, Takuya Futase +1 more | 2017-03-28 |
| 9524904 | Early bit line air gap formation | Hiroto Ohori, Takuya Futase, Yuji Takahashi, Toshiyuki Sega, Kotaro Jinnouchi +1 more | 2016-12-20 |
| 9478461 | Conductive line structure with openings | Takuya Futase, Hiroto Ohori, Kotaro Jinnouchi, Noritaka Fukuo, Yuji Takahashi +1 more | 2016-10-25 |
| 9391081 | Metal indentation to increase inter-metal breakdown voltage | Takuya Futase, Noritaka Fukuo, Yuji Takahashi, Shunsuke Watanabe, Katsuo Yamada +1 more | 2016-07-12 |