Emi Ishida — 40 Patents at AMD

Emi Ishida has been granted 40 US patents while listed as an inventor at AMD. The first was granted in 1994 and the most recent in May 2006. Emi Ishida ranks #78,057 of 4,157,543 US inventors in our database (top 1.9%). Patent records list Emi Ishida in Stanford, CA, US.

Issued Patents All Time

Showing 1–25 of 40 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
7041714	Dental adhesive	Hiroshi Takeshita, Hideki Kazama	2006-05-09
6756600	Ion implantation with improved ion source life expectancy	Che-Hoo Ng, Jaime M. Reyes, Jinning Liu, Sandeep Mehta	2004-06-29
6642134	Semiconductor processing employing a semiconductor spacer	Scott Luning	2003-11-04	$3,831,000
6514833	Method of inhibiting lateral diffusion between adjacent wells by introducing carbon or fluorine ions into bottom of STI groove	Che-Hoo Ng	2003-02-04	$1,030,000
6506640	Multiple channel implantation to form retrograde channel profile and to engineer threshold voltage and sub-surface punch-through	Deepak Nayak, Ming-Yin Hao	2003-01-14	$2,234,000
6482725	Gate formation method for reduced poly-depletion and boron penetration	—	2002-11-19	$1,532,000
6475868	Oxygen implantation for reduction of junction capacitance in MOS transistors	Ming-Yin Hao, Asim A. Selcuk, Richard P. Rouse	2002-11-05	$1,578,000
6472283	MOS transistor processing utilizing UV-nitride removable spacer and HF etch	Srinath Krishman, Ming-Yin Hao, Effiong Ibok	2002-10-29	$1,498,000
6455385	Semiconductor fabrication with multiple low dose implant	Roger Alvis	2002-09-24	$1,057,000
6444550	Laser tailoring retrograde channel profile in surfaces	Ming-Yin Hao	2002-09-03	$1,843,000
6429083	Removable spacer technology using ion implantation to augment etch rate differences of spacer materials	Srinath Krishnan, Ming-Yin Hao, Effiong Ibok	2002-08-06	$1,934,000
6426279	Epitaxial delta doping for retrograde channel profile	Carl Robert Huster	2002-07-30	$3,277,000
6423601	Retrograde well structure formation by nitrogen implantation	Ming-Yin Hao	2002-07-23	$1,368,000
6410393	Semiconductor device with asymmetric channel dopant profile	Ming-Yin Hao	2002-06-25	$2,000,000
6403433	Source/drain doping technique for ultra-thin-body SOI MOS transistors	Bin Yu, Jonathan Kluth	2002-06-11	$2,353,000
6395606	MOSFET with metal in gate for reduced gate resistance	Carl Robert Huster, Ognjen Milic-Strkalj	2002-05-28	$2,985,000
6372582	Indium retrograde channel doping for improved gate oxide reliability	Richard P. Rouse, Ming-Yin Hao, Effiong Ibok	2002-04-16	$2,231,000
6355528	Method to form narrow structure using double-damascene process	Scott Luning, Tim Thurgate	2002-03-12	$4,949,000
6344396	Removable spacer technology using ion implantation for forming asymmetric MOS transistors	Srinath Krishman, Ming-Yin Hao, Effiong Ibok	2002-02-05	$5,814,000
6342423	MOS-type transistor processing utilizing UV-nitride removable spacer and HF etch	Srinath Krishnan, Ming-Yin Hao, Effiong Ibok	2002-01-29	$11,164,000
6337260	Use of knocked-on oxygen atoms for reduction of transient enhanced diffusion	—	2002-01-08	$11,293,000
6316319	Method of manufacturing a semiconductor device having shallow junctions	Dong-Hyuk Ju	2001-11-13	$7,839,000
6277698	Method of manufacturing semiconductor devices having uniform, fully doped gate electrodes	Dong-Hyuk Ju, David Wu	2001-08-21	$5,111,000
6265291	Circuit fabrication method which optimizes source/drain contact resistance	Bin Yu	2001-07-24	$3,903,000
6245623	CMOS semiconductor device containing N-channel transistor having shallow LDD junctions	Dong-Hyuk Ju	2001-06-12	$5,669,000

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Emi Ishida — 40 Patents

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