Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Removable spacer technology using ion implantation for forming asymmetric MOS transistors

Removable spacer technology using ion implantation for forming asymmetric MOS transistors

US Patent 6344396 · Granted Feb 5, 2002

Estimated economic value: $5,814,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Illegal address mask method and device for cores of DSP2025
Wristband2024
Method of atmospheric discharge energy conversion, storage and distribution2011
Dental adhesive2006
Capacitor in an interconnect system and method of manufacturing thereof2005
Methods for the deposition of high-K films and high-K films produced thereby2004
Stacked polysilicon layer for boron penetration inhibition2004
Ion implantation with improved ion source life expectancy2004
High density dual bit flash memory cell with non planar structure2004
Interfacial barrier layer in semiconductor devices with high-K gate dielectric m2004
Semiconductor processing employing a semiconductor spacer2003
Bi-layer floating gate for improved work function between floating gate and a hi2003