Issued Patents All Time
Showing 26–40 of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6190980 | Method of tilted implant for pocket, halo and source/drain extension in ULSI dense structures | Bin Yu, Ming-Ren Lin | 2001-02-20 |
| 6180468 | Very low thermal budget channel implant process for semiconductors | Bin Yu, Scott Luning, Timothy Thurgate | 2001-01-30 |
| 6143632 | Deuterium doping for hot carrier reliability improvement | Peng Fang | 2000-11-07 |
| 6117719 | Oxide spacers as solid sources for gallium dopant introduction | Scott Luning | 2000-09-12 |
| 6100171 | Reduction of boron penetration by laser anneal removal of fluorine | — | 2000-08-08 |
| 6074937 | End-of-range damage suppression for ultra-shallow junction formation | Shekhar Pramanick, Che-Hoo Ng | 2000-06-13 |
| 6051473 | Fabrication of raised source-drain transistor devices | Scott Luning, Dong-Hyuk Ju, Don Draper | 2000-04-18 |
| 6040019 | Method of selectively annealing damaged doped regions | Xiao-Yu Li, Sunil Mehta | 2000-03-21 |
| 5998272 | Silicidation and deep source-drain formation prior to source-drain extension formation | Scott Luning, Dong-Hyuk Ju | 1999-12-07 |
| 5966605 | Reduction of poly depletion in semiconductor integrated circuits | — | 1999-10-12 |
| 5937325 | Formation of low resistivity titanium silicide gates in semiconductor integrated circuits | — | 1999-08-10 |
| 5904575 | Method and apparatus incorporating nitrogen selectively for differential oxide growth | Xiao-Yu Li, Sunil Mehta | 1999-05-18 |
| 5885904 | Method to incorporate, and a device having, oxide enhancement dopants using gas immersion laser doping (GILD) for selectively growing an oxide layer | Sunil Mehta, Xiao-Yu Li | 1999-03-23 |
| 5795627 | Method for annealing damaged semiconductor regions allowing for enhanced oxide growth | Sunil Mehta, Xiao-Yu Li | 1998-08-18 |
| 5316969 | Method of shallow junction formation in semiconductor devices using gas immersion laser doping | Thomas W. Sigmon, William T. Lynch | 1994-05-31 |