Peng Fang — 19 Patents at AMD | Patent Leaderboard

Peng Fang has been granted 19 US patents while listed as an inventor at AMD. The first was granted in 1997 and the most recent in December 2025. Peng Fang ranks #229,345 of 4,157,543 US inventors in our database (top 5.5%). Patent records list Peng Fang in Kingston, ON, CA.

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Showing 1–19 of 19 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
12506406	Input stage for a power converter	—	2025-12-23
D1039167	Radiopharmaceutical synthesis device	Shanyou YU, Xuan Lv, Chenglong YAN	2024-08-13
D1022246	Waste gas treatment device for radiopharmaceutical synthesis	Shanyou YU, Xuan Lv, Chenglong YAN	2024-04-09
10015848	Primary side controlled LED driver with ripple cancellation	Yan-Fei Liu	2018-07-03
9917524	Energy channelling single stage power converter	Yan-Fei Liu	2018-03-13
8788252	Multi-well time-lapse nodal analysis of transient production systems	Wentao Zhou, Raj Banerjee, Eduardo Proano, Ji Li, Yinli Wang +4 more	2014-07-22	$35,758,000
6216099	Test system and methodology to improve stacked NAND gate based critical path performance and reliability	Sunil N. Shabde	2001-04-10	$6,300,000
6180441	Bar field effect transistor	John T. Yue, Matthew S. Buynoski, Yowjuang W. Liu	2001-01-30	$6,431,000
6143632	Deuterium doping for hot carrier reliability improvement	Emi Ishida	2000-11-07	$6,155,000
6140186	Method of forming asymmetrically doped source/drain regions	Ming-Ren Lin, Donald L. Wollesen	2000-10-31	$4,395,000
6133746	Method for determining a reliable oxide thickness	Hao Fang	2000-10-17	$7,276,000
6043102	Assessing plasma induced gate dielectric degradation with stress induced leakage current measurements	Jiang Tao	2000-03-28	$9,076,000
6023100	Metallization stack structure to improve electromigration resistance and keep low resistivity of ULSI interconnects	Jiang Tao	2000-02-08	$8,952,000
5994776	Interlevel dielectric with multiple air gaps between conductive lines of an integrated circuit	Homi Fatemi	1999-11-30	$2,801,000
5932911	Bar field effect transistor	John T. Yue, Matthew S. Buynoski, Yowjuang W. Liu	1999-08-03	$2,588,000
5904528	Method of forming asymmetrically doped source/drain regions	Ming-Ren Lin, Donald L. Wollesen	1999-05-18	$2,666,000
5891802	Method for fabricating a metallization stack structure to improve electromigration resistance and keep low resistivity of ULSI interconnects	Jiang Tao	1999-04-06	$2,671,000
5606518	Test method for predicting hot-carrier induced leakage over time in short-channel IGFETS and products designed in accordance with test results	Hao Fang, John T. Yue	1997-02-25	$14,795,000
5600578	Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results	Hao Fang, John T. Yue	1997-02-04	$13,750,000

Peng Fang — 19 Patents

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