Peng Fang has been granted 19 US patents while listed as an inventor at AMD . The first was granted in 1997 and the most recent in December 2025. Peng Fang ranks #229,345 of 4,157,543 US inventors in our database (top 5.5%). Patent records list Peng Fang in Kingston, ON, CA.
Patents per Year Patents granted per year, 1997 to 2024 Bar chart with a peak of 5 patents in 2000. peak 5 1997: 2 patents 1997 1999: 4 patents 1999 2000: 5 patents 2000 2001: 2 patents 2001 2014: 1 patents 2014 2018: 2 patents 2018 2024: 2 patents 2024 Issued Patents All Time
Showing 1–19 of 19 patents
Patent # Title Co-Inventors Date Approx Value ⓘ
12506406 Input stage for a power converter — 2025-12-23
D1039167 Radiopharmaceutical synthesis device Shanyou YU , Xuan Lv , Chenglong YAN 2024-08-13
D1022246 Waste gas treatment device for radiopharmaceutical synthesis Shanyou YU , Xuan Lv , Chenglong YAN 2024-04-09
10015848 Primary side controlled LED driver with ripple cancellation Yan-Fei Liu 2018-07-03
9917524 Energy channelling single stage power converter Yan-Fei Liu 2018-03-13
8788252 Multi-well time-lapse nodal analysis of transient production systems Wentao Zhou , Raj Banerjee , Eduardo Proano , Ji Li , Yinli Wang +4 more 2014-07-22
$35,758,000
6216099 Test system and methodology to improve stacked NAND gate based critical path performance and reliability Sunil N. Shabde 2001-04-10
$6,300,000
6180441 Bar field effect transistor John T. Yue , Matthew S. Buynoski , Yowjuang W. Liu 2001-01-30
$6,431,000
6143632 Deuterium doping for hot carrier reliability improvement Emi Ishida 2000-11-07
$6,155,000
6140186 Method of forming asymmetrically doped source/drain regions Ming-Ren Lin , Donald L. Wollesen 2000-10-31
$4,395,000
6133746 Method for determining a reliable oxide thickness Hao Fang 2000-10-17
$7,276,000
6043102 Assessing plasma induced gate dielectric degradation with stress induced leakage current measurements Jiang Tao 2000-03-28
$9,076,000
6023100 Metallization stack structure to improve electromigration resistance and keep low resistivity of ULSI interconnects Jiang Tao 2000-02-08
$8,952,000
5994776 Interlevel dielectric with multiple air gaps between conductive lines of an integrated circuit Homi Fatemi 1999-11-30
$2,801,000
5932911 Bar field effect transistor John T. Yue , Matthew S. Buynoski , Yowjuang W. Liu 1999-08-03
$2,588,000
5904528 Method of forming asymmetrically doped source/drain regions Ming-Ren Lin , Donald L. Wollesen 1999-05-18
$2,666,000
5891802 Method for fabricating a metallization stack structure to improve electromigration resistance and keep low resistivity of ULSI interconnects Jiang Tao 1999-04-06
$2,671,000
5606518 Test method for predicting hot-carrier induced leakage over time in short-channel IGFETS and products designed in accordance with test results Hao Fang , John T. Yue 1997-02-25
$14,795,000
5600578 Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results Hao Fang , John T. Yue 1997-02-04
$13,750,000
