Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Retrograde well structure formation by nitrogen implantation

Retrograde well structure formation by nitrogen implantation

US Patent 6423601 · Granted Jul 23, 2002

Estimated economic value: $1,368,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Illegal address mask method and device for cores of DSP2025
Wristband2024
Dental adhesive2006
Capacitor in an interconnect system and method of manufacturing thereof2005
Ion implantation with improved ion source life expectancy2004
Semiconductor processing employing a semiconductor spacer2003
Method of inhibiting lateral diffusion between adjacent wells by introducing car2003
Multiple channel implantation to form retrograde channel profile and to engineer2003
Multiple channel implantation to form retrograde channel profile and to engineer2003
Gate formation method for reduced poly-depletion and boron penetration2002
Oxygen implantation for reduction of junction capacitance in MOS transistors2002
Oxygen implantation for reduction of junction capacitance in MOS transistors2002