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Home › Dual purpose test structure for gate-body current measurement in PD/SOI and for direct extraction of physical gate length in scaled CMOS technologies

Dual purpose test structure for gate-body current measurement in PD/SOI and for direct extraction of physical gate length in scaled CMOS technologies

US Patent 7132683 · Granted Nov 7, 2006

Estimated economic value: $14,140,000 ⓘ

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