| 12484225 |
Metal hybrid charge storage structure for memory |
Guangyu Huang, Dipanjan Basu, Meng-Wei Kuo, Henok T. MEBRAHTU, Michael Xiaonan Wang +5 more |
2025-11-25 |
|
| 12424483 |
3D NAND with inter-wordline airgap |
Vijay Saradhi Mangu, David S. Meyaard, Krishna K. Parat |
2025-09-23 |
|
| 11798633 |
Methods and apparatuses including an asymmetric assist device |
Hiroyuki Sanda |
2023-10-24 |
$15,333,000 |
| 11626424 |
Semiconductor devices and methods of fabrication |
Hongbin Zhu, Zhenyu Lu, Gordon A. Haller, Jie Sun, John D. Hopkins |
2023-04-11 |
$15,540,000 |
| 11088168 |
Semiconductor devices and methods of fabrication |
Hongbin Zhu, Zhenyu Lu, Gordon A. Haller, Jie Sun, John D. Hopkins |
2021-08-10 |
$13,320,000 |
| 11037633 |
Methods and apparatuses including an asymmetric assist device |
Hiroyuki Sanda |
2021-06-15 |
$19,940,000 |
| 10825831 |
Non-volatile memory with storage nodes having a radius of curvature |
Henok T. MEBRAHTU, Krishna K. Parat |
2020-11-03 |
$38,832,000 |
| 10622450 |
Modified floating gate and dielectric layer geometry in 3D memory arrays |
Srikant Jayanti, Hiroyuki Sanda, Meng-Wei Kuo, Srivardhan Gowda, Krishna K. Parat |
2020-04-14 |
$33,667,000 |
| 10608004 |
Semiconductor devices and methods of fabrication |
Hongbin Zhu, Zhenyu Lu, Gordon A. Haller, Jie Sun, John D. Hopkins |
2020-03-31 |
$9,822,000 |
| 10297325 |
Methods and apparatuses including an asymmetric assist device |
Hiroyuki Sanda |
2019-05-21 |
$20,228,000 |
| 10128262 |
Vertical memory having varying storage cell design through the storage cell stack |
Hiroyuki Sanda |
2018-11-13 |
$26,640,000 |
| 10038002 |
Semiconductor devices and methods of fabrication |
Hongbin Zhu, Zhenyu Lu, Gordon A. Haller, Jie Sun, John D. Hopkins |
2018-07-31 |
$37,526,000 |
| 9953842 |
Methods of forming a portion of a memory array having a conductor having a variable concentration of germanium |
— |
2018-04-24 |
$55,411,000 |
| 9875801 |
Methods and apparatuses including an asymmetric assist device |
Hiroyuki Sanda |
2018-01-23 |
$24,273,000 |
| 9722074 |
Local buried channel dielectric for vertical NAND performance enhancement and vertical scaling |
Fatma Arzum Simsek-Ege |
2017-08-01 |
$11,137,000 |
| 9698022 |
Self-aligned floating gate in a vertical memory structure |
— |
2017-07-04 |
|
| 9666449 |
Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation |
— |
2017-05-30 |
$22,754,000 |
| 9443864 |
Self-aligned floating gate in a vertical memory structure |
— |
2016-09-13 |
$11,798,000 |
| 9196625 |
Self-aligned floating gate in a vertical memory structure |
— |
2015-11-24 |
$18,043,000 |
| 9190490 |
Local buried channel dielectric for vertical NAND performance enhancement and vertical scaling |
Fatma Arzum Simsek-Ege |
2015-11-17 |
$15,457,000 |
| 9082714 |
Use of etch process post wordline definition to improve data retention in a flash memory device |
Max Hineman, Ronald A. Weimer, Vinayak Shamanna, Thomas M. Graettinger, William Kueber +2 more |
2015-07-14 |
$20,297,000 |
| 8878279 |
Self-aligned floating gate in a vertical memory structure |
— |
2014-11-04 |
$23,728,000 |
