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Semiconductor devices including stack oxide materials having different densities or different oxide portions, and semiconductor devices including stack dielectric materials having different portions |
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Memory including blocking dielectric in etch stop tier |
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Modified floating gate and dielectric layer geometry in 3D memory arrays |
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Flash memory devices incorporating a polydielectric layer |
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| 10170491 |
Memory including blocking dielectric in etch stop tier |
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2019-01-01 |
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3D memory |
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| 10103160 |
Semiconductor structures including dielectric materials having differing removal rates |
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Memory including blocking dielectric in etch stop tier |
Fatma Arzum Simsek-Ege, John D. Hopkins |
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| 9412821 |
Stacked thin channels for boost and leakage improvement |
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| 9275909 |
Methods of fabricating semiconductor structures |
Fatma Arzum Simsek-Ege, Pavan Kumar Reddy Aella |
2016-03-01 |
| 9230986 |
3D memory |
John D. Hopkins, Darwin Franseda Fan, Fatma Arzum Simsek-Ege, James C. Brighten, Aurelio Giancarlo Mauri |
2016-01-05 |
| 9209199 |
Stacked thin channels for boost and leakage improvement |
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| 9064970 |
Memory including blocking dielectric in etch stop tier |
Fatma Arzum Simsek-Ege, John D. Hopkins |
2015-06-23 |
| 8946807 |
3D memory |
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2015-02-03 |
