| 12480215 |
Integratead wet clean for bevel treatments |
Balasubramanian Pranatharthiharan |
2025-11-25 |
|
| 12051599 |
Cleaning method with in-line SPM processing |
Brian J. Brown, Ekaterina A. Mikhaylichenko |
2024-07-30 |
$79,851,000 |
| 12027382 |
Surface cleaning with directed high pressure chemistry |
Ekaterina A. Mikhaylichenko, Brian J. Brown |
2024-07-02 |
$85,126,000 |
| 11942359 |
Reduced semiconductor wafer bow and warpage |
Abbas Ali, Christopher Scott Whitesell, Byron Joseph Palla |
2024-03-26 |
$28,354,000 |
| 11682567 |
Cleaning system with in-line SPM processing |
Brian J. Brown, Ekaterina A. Mikhaylichenko |
2023-06-20 |
$48,645,000 |
| 11239346 |
Split gate memory cell fabrication and system |
John Howard MacPeak, Douglas Ticknor Grider |
2022-02-01 |
$20,446,000 |
| 11205578 |
Dopant anneal with stabilization step for IC with matched devices |
Kenneth Palomino, Mahalingam Nandakumar |
2021-12-21 |
$36,896,000 |
| 11205575 |
Method for stripping one or more layers from a semiconductor wafer |
Byron Joseph Palla, Stephen A. Keller, Brian Edward Hornung, Douglas Ticknor Grider |
2021-12-21 |
$36,896,000 |
| 10483261 |
Integrated circuit having chemically modified spacer surface |
Amitabh Jain |
2019-11-19 |
$19,310,000 |
| 9881795 |
Method of fabricating semiconductors |
David Gerald Farber, Ping Jiang, Douglas Ticknor Grider |
2018-01-30 |
$28,447,000 |
| 9768078 |
Inner L-spacer for replacement gate flow |
Chet V. Lenox, Seung-Chul Song |
2017-09-19 |
$18,310,000 |
| 9721847 |
High-k / metal gate CMOS transistors with TiN gates |
Hiroaki Niimi |
2017-08-01 |
$11,706,000 |
| 9620423 |
Integrated circuit having chemically modified spacer surface |
Amitabh Jain |
2017-04-11 |
$14,039,000 |
| 9496359 |
Integrated circuit having chemically modified spacer surface |
Amitabh Jain |
2016-11-15 |
$11,505,000 |
| 9490143 |
Method of fabricating semiconductors |
David Gerald Farber, Ping Jiang, Douglas Ticknor Grider |
2016-11-08 |
$12,045,000 |
| 9362375 |
Inner L-spacer for replacement gate flow |
Chet V. Lenox, Seung-Chul Song |
2016-06-07 |
$15,467,000 |
| 9224657 |
Hard mask for source/drain epitaxy control |
David Gerald Farber, Tom Lii |
2015-12-29 |
$12,350,000 |
| 9178037 |
Inner L-spacer for replacement gate flow |
Chet V. Lenox, Seung-Chul Song |
2015-11-03 |
$14,269,000 |
| 9087917 |
Inner L-spacer for replacement gate flow |
Chet V. Lenox, Seung-Chul Song |
2015-07-21 |
$12,880,000 |
| 9070785 |
High-k / metal gate CMOS transistors with TiN gates |
Hiroaki Niimi |
2015-06-30 |
$29,632,000 |
| 8748996 |
Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations |
James Joseph Chambers, Hiroaki Niimi |
2014-06-10 |
$5,851,000 |
| 8748992 |
MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls |
James Joseph Chambers |
2014-06-10 |
$5,851,000 |
| 8618661 |
Die having coefficient of thermal expansion graded layer |
Rajesh Tiwari |
2013-12-31 |
$8,617,000 |
| 8450221 |
Method of forming MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls |
James Joseph Chambers |
2013-05-28 |
$9,455,000 |
| 8441078 |
Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations |
James Joseph Chambers, Hiroaki Niimi |
2013-05-14 |
$11,778,000 |
