GL

Gerrit J. Leusink

TL Tokyo Electron Limited: 50 patents #52 of 5,567Top 1%
IBM: 3 patents #26,272 of 70,183Top 40%
📍 Albany, NY: #27 of 790 inventorsTop 4%
🗺 New York: #1,862 of 115,490 inventorsTop 2%
Overall (All Time): #53,529 of 4,157,543Top 2%
50
Patents All Time

Issued Patents All Time

Showing 1–25 of 50 patents

Patent #TitleCo-InventorsDate
12406887 Selective film formation using a self-assembled monolayer Dina H. Triyoso, Lior Huli, Corey Lemley, Robert D. Clark 2025-09-02
12400963 Conductive superlattice structures and methods of forming the same Hiroaki Niimi, Hiroki Maehara, Einstein Noel Abarra, Naoki Watanabe 2025-08-26
12341053 System for backside deposition of a substrate Ronald Nasman, Rodney L. Robison, Hoyoung Kang, Daniel Fulford 2025-06-24
12237216 Method for filling recessed features in semiconductor devices with a low-resistivity metal Kai-Hung Yu, Shihsheng Chang, Ying Trickett, Eric Chih-Fang Liu, Yun Han +5 more 2025-02-25
11908728 System for backside deposition of a substrate Ronald Nasman, Rodney L. Robison, Hoyoung Kang, Daniel Fulford 2024-02-20
11894240 Semiconductor processing systems with in-situ electrical bias David Hurley, Ioan Domsa, Ian Colgan, Gerhardus Van Der Linde, Patrick Hughes +6 more 2024-02-06
11621190 Method for filling recessed features in semiconductor devices with a low-resistivity metal Kai-Hung Yu, David L. O'Meara, Nicholas Joy, Gyanaranjan Pattanaik, Robert D. Clark +3 more 2023-04-04
11444082 Semiconductor apparatus having stacked gates and method of manufacture thereof Jeffrey Smith, Anton J. deVilliers, Kandabara Tapily, Subhadeep Kal 2022-09-13
11443953 Method for forming and using stress-tuned silicon oxide films in semiconductor device patterning Kandabara Tapily, Anton J. deVilliers 2022-09-13
11170992 Area selective deposition for cap layer formation in advanced contacts Kandabara Tapily 2021-11-09
11024535 Method for filling recessed features in semiconductor devices with a low-resistivity metal Kai-Hung Yu, David L. O'Meara, Nicholas Joy, Gyanaranjan Pattanaik, Robert D. Clark +3 more 2021-06-01
10923392 Interconnect structure and method of forming the same Soo Doo Chae, Jeffrey Smith, Robert D. Clark, Kai-Hung Yu 2021-02-16
10847424 Method for forming a nanowire device Kandabara Tapily, Jeffrey Smith 2020-11-24
10833078 Semiconductor apparatus having stacked gates and method of manufacture thereof Jeffrey Smith, Anton J. deVilliers, Kandabara Tapily, Subhadeep Kal 2020-11-10
10700009 Ruthenium metal feature fill for interconnects Kai-Hung Yu, Nicholas Joy, Eric Chih-Fang Liu, David L. O'Meara, David S. H. Rosenthal +2 more 2020-06-30
10580691 Method of integrated circuit fabrication with dual metal power rail Soo Doo Chae, Kaoru Maekawa, Jeffrey Smith, Nicholas Joy, Kai-Hung Yu 2020-03-03
10541174 Interconnect structure and method of forming the same Soo Doo Chae, Jeffrey Smith, Robert D. Clark, Kai-Hung Yu 2020-01-21
10453681 Method of selective vertical growth of a dielectric material on a dielectric substrate Kandabara Tapily, Takashi Matsumoto, Yusaku Kashiwagi 2019-10-22
10426001 Processing system for electromagnetic wave treatment of a substrate at microwave frequencies Ronald Nasman, Mirko Vukovic, Rodney L. Robison, Robert D. Clark 2019-09-24
10410861 Method of filling retrograde recessed features Kandabara Tapily 2019-09-10
10378105 Selective deposition with surface treatment Kai-Hung Yu, Kandabara Tapily, Takahiro Hakamata, Subhadeep Kal 2019-08-13
10217670 Wrap-around contact integration scheme Kandabara Tapily, Satoru Nakamura, Soo Doo Chae, Akiteru Ko, Kaoru Maekawa 2019-02-26
10157784 Integration of a self-forming barrier layer and a ruthenium metal liner in copper metallization Kai-Hung Yu, Manabu Oie, Kaoru Maekawa, Cory Wajda, Yuuki Kikuchi +2 more 2018-12-18
10068764 Selective metal oxide deposition using a self-assembled monolayer surface pretreatment Kandabara Tapily, Cory Wajda, Hoyoung Kang 2018-09-04
10056328 Ruthenium metal feature fill for interconnects Kai-Hung Yu, Cory Wajda, Tadahiro Ishizaka, Takahiro Hakamata 2018-08-21