GL

Gerrit J. Leusink

TL Tokyo Electron Limited: 50 patents #52 of 5,567Top 1%
IBM: 3 patents #26,272 of 70,183Top 40%
📍 Albany, NY: #27 of 790 inventorsTop 4%
🗺 New York: #1,862 of 115,490 inventorsTop 2%
Overall (All Time): #53,529 of 4,157,543Top 2%
50
Patents All Time

Issued Patents All Time

Showing 26–50 of 50 patents

Patent #TitleCo-InventorsDate
10014213 Selective bottom-up metal feature filling for interconnects Kai-Hung Yu, Kandabara Tapily, Robert D. Clark 2018-07-03
10008564 Method of corner rounding and trimming of nanowires by microwave plasma Kandabara Tapily, Ying Trickett, Chihiro TAMURA, Cory Wajda, Kaoru Maekawa 2018-06-26
9735067 Substrate tuning system and method using optical projection Anton J. deVilliers, Daniel Fulford 2017-08-15
9711449 Ruthenium metal feature fill for interconnects Kai-Hung Yu, Cory Wajda, Tadahiro Ishizaka, Takahiro Hakamata 2017-07-18
9646898 Methods for treating a substrate by optical projection of a correction pattern based on a detected spatial heat signature of the substrate Anton J. deVilliers, Daniel Fulford 2017-05-09
8785310 Method of forming conformal metal silicide films Toshio Hasegawa, Kunihiro Tada, Hideaki Yamasaki, David L. O'Meara 2014-07-22
8334183 Semiconductor device containing a buried threshold voltage adjustment layer and method of forming Robert D. Clark 2012-12-18
8197898 Method and system for depositing a layer from light-induced vaporization of a solid precursor 2012-06-12
7985680 Method of forming aluminum-doped metal carbonitride gate electrodes Toshio Hasegawa 2011-07-26
7772073 Semiconductor device containing a buried threshold voltage adjustment layer and method of forming Robert D. Clark 2010-08-10
7708835 Film precursor tray for use in a film precursor evaporation system and method of using Kenji Suzuki, Emmanuel Guidotti, Masamichi Hara, Daisuke Kuroiwa, Tadahiro Ishizaka 2010-05-04
7678421 Method for increasing deposition rates of metal layers from metal-carbonyl precursors Kenji Suzuki, Emmanuel Guidotti, Fenton R. McFeely, Sandra G. Malhotra 2010-03-16
7638002 Multi-tray film precursor evaporation system and thin film deposition system incorporating same Kenji Suzuki, Emmanuel Guidotti, Masamichi Hara, Daisuke Kuroiwa 2009-12-29
7488512 Method for preparing solid precursor tray for use in solid precursor evaporation system Kenji Suzuki, Emmanuel Guidotti, Masamichi Hara, Daisuke Kuroiwa, Sandra G. Malhotra +2 more 2009-02-10
7484315 Replaceable precursor tray for use in a multi-tray solid precursor delivery system Kenji Suzuki, Emmanuel Guidotti, Masamichi Hara, Daisuke Kuroiwa 2009-02-03
7459396 Method for thin film deposition using multi-tray film precursor evaporation system Kenji Suzuki, Emmanuel Guidotti, Masamichi Hara, Daisuke Kuroiwa 2008-12-02
7345184 Method and system for refurbishing a metal carbonyl precursor Kenji Suzuki, Fenton R. McFeely 2008-03-18
7270848 Method for increasing deposition rates of metal layers from metal-carbonyl precursors Kenji Suzuki, Emmanuel Guidotti, Fenton R. McFeely, Sandra G. Malhotra 2007-09-18
6652711 Inductively-coupled plasma processing system Jozef Brcka, John Drewery, Michael Grapperhaus, Glyn Reynolds, Mirko Vukovic +1 more 2003-11-25
6626186 Method for stabilizing the internal surface of a PECVD process chamber Joseph T. Hillman, Steven P. Caliendo 2003-09-30
6417626 Immersed inductively—coupled plasma source Jozef Brcka, John Drewery, Michael Grapperhaus, Glyn Reynolds, Mirko Vukovic +1 more 2002-07-09
6368987 Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions Stanislaw Kopacz, Douglas A. Webb, Rene E. LeBlanc, Michael S. Ameen, Joseph T. Hillman +2 more 2002-04-09
6302057 Apparatus and method for electrically isolating an electrode in a PECVD process chamber Michael G. Ward, Tayler Bao, Jerry Yeh, Joseph T. Hillman, Tugrul Yasar 2001-10-16
6274496 Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing Michael G. Ward, Michael S. Ameen, Joseph T. Hillman 2001-08-14
6161500 Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions Stanislaw Kopacz, Douglas A. Webb, Rene E. LeBlanc, Michael S. Ameen, Joseph T. Hillman +2 more 2000-12-19