Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11170967 | Liquid metal ion source | Neil J. Bassom, Neil K. Colvin, Tseh-Jen Hsieh | 2021-11-09 |
| 6635569 | Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus | Joseph T. Hillman, Gert Leusink, Michael G. Ward, Tugrul Yasar | 2003-10-21 |
| 6368987 | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions | Stanislaw Kopacz, Douglas A. Webb, Gerrit J. Leusink, Rene E. LeBlanc, Joseph T. Hillman +2 more | 2002-04-09 |
| 6274496 | Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing | Gerrit J. Leusink, Michael G. Ward, Joseph T. Hillman | 2001-08-14 |
| 6161500 | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions | Stanislaw Kopacz, Douglas A. Webb, Gerrit J. Leusink, Rene E. LeBlanc, Joseph T. Hillman +2 more | 2000-12-19 |
| 6143128 | Apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof | Joseph T. Hillman | 2000-11-07 |
| 6093645 | Elimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridation | Joseph T. Hillman, Douglas A. Webb | 2000-07-25 |
| 6037252 | Method of titanium nitride contact plug formation | Joseph T. Hillman, Robert F. Foster | 2000-03-14 |
| 5989652 | Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications | Joseph T. Hillman | 1999-11-23 |
| 5972790 | Method for forming salicides | Chantal Arena, Robert F. Foster, Joseph T. Hillman, Jacques Faguet | 1999-10-26 |
| 5926737 | Use of TiCl.sub.4 etchback process during integrated CVD-Ti/TiN wafer processing | Gert Leusink, Joseph T. Hillman | 1999-07-20 |
| 5834371 | Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof | Joseph T. Hillman | 1998-11-10 |
| 5455197 | Control of the crystal orientation dependent properties of a film deposited on a semiconductor wafer | Abe Ghanbari | 1995-10-03 |