GL

Gert Leusink

TL Tokyo Electron Limited: 19 patents #307 of 5,567Top 6%
IBM: 7 patents #14,640 of 70,183Top 25%
📍 Albany, NY: #82 of 790 inventorsTop 15%
🗺 New York: #6,964 of 115,490 inventorsTop 7%
Overall (All Time): #223,266 of 4,157,543Top 6%
20
Patents All Time

Issued Patents All Time

Showing 1–20 of 20 patents

Patent #TitleCo-InventorsDate
9607888 Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling Kai-Hung Yu, Toshio Hasegawa, Tadahiro Ishizaka, Manabu Oie, Fumitaka Amano +3 more 2017-03-28
8722548 Structures and techniques for atomic layer deposition Shintaro Aoyama, Robert D. Clark, Steven P. Consiglio, Marinus Hopstaken, Hemanth Jagannathan +4 more 2014-05-13
8580034 Low-temperature dielectric formation for devices with strained germanium-containing channels 2013-11-12
8460945 Method for monitoring status of system components David L. O'Meara, Daniel Craig Burdett, Stephen Cabral, John William Kostenko, Cory Wajda 2013-06-11
8168548 UV-assisted dielectric formation for devices with strained germanium-containing layers 2012-05-01
7674710 Method of integrating metal-containing films into semiconductor devices Shigeo Ashigaki, Hideaki Yamasaki, Tomoyuki Sakoda, Mikio Suzuki, Genji Nakamura 2010-03-09
7479454 Method and processing system for monitoring status of system components David L. O'Meara, Daniel Craig Burdett, Stephen Cabral, John William Kostenko, Cory Wajda 2009-01-20
7419702 Method for processing a substrate Kazuhito Nakamura, Cory Wajda, Enrico Mosca, Yumiko Kawano, Fenton R. McFeely +1 more 2008-09-02
7393761 Method for fabricating a semiconductor device Cory Wajda 2008-07-01
7300891 Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation Igeta Masonobu, Cory Wajda 2007-11-27
7265066 Method and system for increasing tensile stress in a thin film using collimated electromagnetic radiation Igeta Masonobu, Cory Waida 2007-09-04
7189431 Method for forming a passivated metal layer Hideaki Yamasaki, Kazuhito Nakamura, Yumiko Kawano, Fenton R. McFeely, Paul C. Jamison 2007-03-13
7078341 Method of depositing metal layers from metal-carbonyl precursors Hideaki Yamasaki, Tsukasa Matsuda, Atsushi Gomi, Tatsuo Hatano, Masahito Sugiura +3 more 2006-07-18
7067422 Method of forming a tantalum-containing gate electrode structure Kazuhito Nakamura, Hideaki Yamasaki, Yumiko Kawano, Fenton R. McFeely, John J. Yurkas +1 more 2006-06-27
6992011 Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma Takenao Nemoto, Emmanuel Guidotti 2006-01-31
6989321 Low-pressure deposition of metal layers from metal-carbonyl precursors Hideaki Yamasaki, Tsukasa Matsuda, Atsushi Gomi, Tatsuo Hatano, Masahito Sugiura +3 more 2006-01-24
6924223 Method of forming a metal layer using an intermittent precursor gas flow process Hideaki Yamasaki, Tsukasa Matsuda, Atsushi Gomi, Tatsuo Hatano, Mitsuhiro Tachibana +6 more 2005-08-02
6853953 Method for characterizing the performance of an electrostatic chuck Jozef Brcka, Bill D. Jones, Jeffrey Jay Long, Bill Oliver, Charles Tweed 2005-02-08
6635569 Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus Michael S. Ameen, Joseph T. Hillman, Michael G. Ward, Tugrul Yasar 2003-10-21
5926737 Use of TiCl.sub.4 etchback process during integrated CVD-Ti/TiN wafer processing Michael S. Ameen, Joseph T. Hillman 1999-07-20