| 10748059 |
Architecture for an electrochemical artificial neural network |
Matthew W. Copel, James B. Hannon, Satoshi Oida |
2020-08-18 |
| 10141528 |
Enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors |
Damon B. Farmer, Shu-Jen Han, Jianshi Tang |
2018-11-27 |
| 10141529 |
Enhancing drive current and increasing device yield in N-type carbon nanotube field effect transistors |
Damon B. Farmer, Shu-Jen Han, Jianshi Tang |
2018-11-27 |
| 8242030 |
Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation |
James B. Hannon, Fenton R. McFeely, Satoshi Oida |
2012-08-14 |
| 7863083 |
High temperature processing compatible metal gate electrode for pFETS and methods for fabrication |
Ricky S. Amos, Douglas A. Buchanan, Cyril Cabral, Jr., Alessandro C. Callegari, Supratik Guha +4 more |
2011-01-04 |
| 7172968 |
Ultra thin, single phase, diffusion barrier for metal conductors |
Stephan A. Cohen, Fenton R. McFeely, Cevdet I. Noyan, Kenneth P. Rodbell, Robert Rosenberg |
2007-02-06 |
| 7067422 |
Method of forming a tantalum-containing gate electrode structure |
Kazuhito Nakamura, Hideaki Yamasaki, Yumiko Kawano, Gert Leusink, Fenton R. McFeely +1 more |
2006-06-27 |
| 7037834 |
Constant emissivity deposition member |
Fenton R. McFeely, Sandra G. Malhotra, Andrew H. Simon |
2006-05-02 |
| 6924223 |
Method of forming a metal layer using an intermittent precursor gas flow process |
Hideaki Yamasaki, Tsukasa Matsuda, Atsushi Gomi, Tatsuo Hatano, Mitsuhiro Tachibana +6 more |
2005-08-02 |
| 6770500 |
Process of passivating a metal-gated complementary metal oxide semiconductor |
Alessandro C. Callegari, Christopher P. D'Emic, Hyungjun Kim, Fenton R. McFeely, Vijay Narayanan |
2004-08-03 |
| 6756651 |
CMOS-compatible metal-semiconductor-metal photodetector |
Ferenc M. Bozso, Fenton R. McFeely |
2004-06-29 |
| 6660330 |
Method for depositing metal films onto substrate surfaces utilizing a chamfered ring support |
Peter S. Locke, Sandra G. Malhotra, Fenton R. McFeely, Andrew H. Simon |
2003-12-09 |
| 6579614 |
Structure having refractory metal film on a substrate |
Kevin K. Chan, Erin C. Jones, Fenton R. McFeely, Paul M. Solomon |
2003-06-17 |
| 6452276 |
Ultra thin, single phase, diffusion barrier for metal conductors |
Stephan A. Cohen, Fenton R. McFeely, Cevdet I. Noyan, Kenneth P. Rodbell, Robert Rosenberg |
2002-09-17 |
| 6238737 |
Method for protecting refractory metal thin film requiring high temperature processing in an oxidizing atmosphere and structure formed thereby |
Kevin K. Chan, Erin C. Jones, Fenton R. McFeely, Paul M. Solomon |
2001-05-29 |
| 6211042 |
Growth of epitaxial semiconductor films in presence of reactive metal |
Fenton R. McFeely, Ismail C. Noyan |
2001-04-03 |
| 6107199 |
Method for improving the morphology of refractory metal thin films |
Russell D. Allen, F. Read McFeely, Cevdet I. Noyan |
2000-08-22 |
| 6091122 |
Fabrication of mid-cap metal gates compatible with ultra-thin dielectrics |
Douglas A. Buchanan, Fenton R. McFeely |
2000-07-18 |
| 6017401 |
Conductivity improvement in thin films of refractory metal |
Fenton R. McFeely, Ismail C. Noyan |
2000-01-25 |
| 5789312 |
Method of fabricating mid-gap metal gates compatible with ultra-thin dielectrics |
Douglas A. Buchanan, Fenton R. McFeely |
1998-08-04 |
