Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7468296 | Thin film germanium diode with low reverse breakdown | Matthew S. Buynoski, Robert J. Chiu, Bryan K. Choo, Calvin T. Gabriel, Joong S. Jeon +5 more | 2008-12-23 |
| 7361586 | Preamorphization to minimize void formation | Nicholas H. Tripsas | 2008-04-22 |
| 7115498 | Method of ultra-low energy ion implantation to form alloy layers in copper | — | 2006-10-03 |
| 6869878 | Method of forming a selective barrier layer using a sacrificial layer | John Sanchez, Darrell M. Erb, Suzette K. Pangrle | 2005-03-22 |
| 6770559 | Method of forming wiring by implantation of seed layer material | Fei Wang, Joffre F. Bernard | 2004-08-03 |
| 6667070 | Method of in situ monitoring of thickness and composition of deposited films using raman spectroscopy | — | 2003-12-23 |
| 6641747 | Method and apparatus for determining an etch endpoint | Todd P. Lukanc | 2003-11-04 |
| 6605513 | Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing | Eric N. Paton, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski, John Foster +4 more | 2003-08-12 |
| 6583070 | Semiconductor device having a low dielectric constant material | Ting Tsui | 2003-06-24 |
| 6562718 | Process for forming fully silicided gates | Qi Xiang, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski, John Foster +5 more | 2003-05-13 |
| 6521529 | HDP treatment for reduced nickel silicide bridging | Minh Van Ngo, Christy Mei-Chu Woo, Robert A. Huertas | 2003-02-18 |
| 6518185 | Integration scheme for non-feature-size dependent cu-alloy introduction | Pin-Chin Connie Wang, Fei Wang, Kashmir Sahota, Steven C. Avanzino, Amit P. Marathe +2 more | 2003-02-11 |
| 6383925 | Method of improving adhesion of capping layers to cooper interconnects | Minh Van Ngo, Lu You, Robert A. Huertas | 2002-05-07 |
| 6281559 | Gate stack structure for variable threshold voltage | Bin Yu | 2001-08-28 |
| 6208030 | Semiconductor device having a low dielectric constant material | Ting Tsui | 2001-03-27 |