| 7468296 |
Thin film germanium diode with low reverse breakdown |
Matthew S. Buynoski, Robert J. Chiu, Bryan K. Choo, Calvin T. Gabriel, Joong S. Jeon +5 more |
2008-12-23 |
| 7361586 |
Preamorphization to minimize void formation |
Nicholas H. Tripsas |
2008-04-22 |
| 7115498 |
Method of ultra-low energy ion implantation to form alloy layers in copper |
— |
2006-10-03 |
| 6869878 |
Method of forming a selective barrier layer using a sacrificial layer |
John Sanchez, Darrell M. Erb, Suzette K. Pangrle |
2005-03-22 |
| 6770559 |
Method of forming wiring by implantation of seed layer material |
Fei Wang, Joffre F. Bernard |
2004-08-03 |
| 6667070 |
Method of in situ monitoring of thickness and composition of deposited films using raman spectroscopy |
— |
2003-12-23 |
| 6641747 |
Method and apparatus for determining an etch endpoint |
Todd P. Lukanc |
2003-11-04 |
| 6605513 |
Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing |
Eric N. Paton, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski, John Foster +4 more |
2003-08-12 |
| 6583070 |
Semiconductor device having a low dielectric constant material |
Ting Tsui |
2003-06-24 |
| 6562718 |
Process for forming fully silicided gates |
Qi Xiang, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski, John Foster +5 more |
2003-05-13 |
| 6521529 |
HDP treatment for reduced nickel silicide bridging |
Minh Van Ngo, Christy Mei-Chu Woo, Robert A. Huertas |
2003-02-18 |
| 6518185 |
Integration scheme for non-feature-size dependent cu-alloy introduction |
Pin-Chin Connie Wang, Fei Wang, Kashmir Sahota, Steven C. Avanzino, Amit P. Marathe +2 more |
2003-02-11 |
| 6383925 |
Method of improving adhesion of capping layers to cooper interconnects |
Minh Van Ngo, Lu You, Robert A. Huertas |
2002-05-07 |
| 6281559 |
Gate stack structure for variable threshold voltage |
Bin Yu |
2001-08-28 |
| 6208030 |
Semiconductor device having a low dielectric constant material |
Ting Tsui |
2001-03-27 |