Issued Patents All Time
Showing 25 most recent of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11672189 | Two-terminal reversibly switchable memory device | Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, Lawrence Schloss +2 more | 2023-06-06 |
| 11502249 | Memory element with a reactive metal layer | Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more | 2022-11-15 |
| 11063214 | Two-terminal reversibly switchable memory device | Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, Lawrence Schloss +2 more | 2021-07-13 |
| 10833125 | Memory element with a reactive metal layer | Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more | 2020-11-10 |
| 10680171 | Two-terminal reversibly switchable memory device | Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, Lawrence Schloss +2 more | 2020-06-09 |
| 10340312 | Memory element with a reactive metal layer | Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more | 2019-07-02 |
| 10224480 | Two-terminal reversibly switchable memory device | Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, Lawrence Schloss +2 more | 2019-03-05 |
| 9831425 | Two-terminal reversibly switchable memory device | Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, Lawrence Schloss +2 more | 2017-11-28 |
| 9818939 | Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof | John Ross Jameson, Wei Ti Lee, Yi Ma, Venkatesh P. Gopinath, Foroozan Sarah Koushan | 2017-11-14 |
| 9806130 | Memory element with a reactive metal layer | Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more | 2017-10-31 |
| 9791257 | Determining a thickness of individual layers of a plurality of metal layers | Mohammed Aftab Alam, Ramez Nachman, David Eric Peters | 2017-10-17 |
| 9570515 | Memory element with a reactive metal layer | Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more | 2017-02-14 |
| 9252359 | Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof | John Ross Jameson, Wei Ti Lee, Foroozan Sarah Koushan | 2016-02-02 |
| 9159408 | Memory element with a reactive metal layer | Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more | 2015-10-13 |
| 9159913 | Two-terminal reversibly switchable memory device | Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, Lawrence Schloss +2 more | 2015-10-13 |
| 8675389 | Memory element with a reactive metal layer | Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more | 2014-03-18 |
| 8611130 | Method for fabricating multi-resistive state memory devices | Darrell Rinerson, Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor +2 more | 2013-12-17 |
| 8062942 | Method for fabricating multi-resistive state memory devices | Darrell Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor +2 more | 2011-11-22 |
| 7889539 | Multi-resistive state memory device with conductive oxide electrodes | Darrell Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor +2 more | 2011-02-15 |
| 7701834 | Movable terminal in a two terminal memory array | Darrell Rinerson, Christophe J. Chevallier, Lawerence Schloss | 2010-04-20 |
| 7633790 | Multi-resistive state memory device with conductive oxide electrodes | Darrel Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor +2 more | 2009-12-15 |
| 7394679 | Multi-resistive state element with reactive metal | Darrell Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor +2 more | 2008-07-01 |
| 7326979 | Resistive memory device with a treated interface | Darrell Rinerson, Wayne Kinney, Steven W. Longcor, Steve Kuo-Ren Hsia, Edmond R. Ward +1 more | 2008-02-05 |
| 7082052 | Multi-resistive state element with reactive metal | Darrell Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor +2 more | 2006-07-25 |
| 7026225 | Semiconductor component and method for precluding stress-induced void formation in the semiconductor component | Christine Hau-Riege, Amit P. Marathe | 2006-04-11 |