Issued Patents All Time
Showing 25 most recent of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12362188 | Method for preventing line bending during metal fill process | Adam Jandl, Sema Ermez, Sanjay Gopinath, Michal Danek, Siew Neo +2 more | 2025-07-15 |
| 12327762 | Molybdenum fill | Shruti Vivek Thombare, Zhongbo YAN, Patrick A. Van Cleemput, Joshua Collins | 2025-06-10 |
| 12014928 | Multi-layer feature fill | Xiaolan Ba, Ruopeng Deng, Juwen Gao, Sanjay Gopinath | 2024-06-18 |
| 11672189 | Two-terminal reversibly switchable memory device | Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez +2 more | 2023-06-06 |
| 11355345 | Method for preventing line bending during metal fill process | Adam Jandl, Sema Ermez, Sanjay Gopinath, Michal Danek, Siew Neo +2 more | 2022-06-07 |
| 11348795 | Metal fill process for three-dimensional vertical NAND wordline | Raashina Humayun, Sanjay Gopinath, Juwen Gao, Michal Danek, Kaihan Ashtiani | 2022-05-31 |
| 11063214 | Two-terminal reversibly switchable memory device | Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez +2 more | 2021-07-13 |
| 10803935 | Conductive metal oxide structures in non-volatile re-writable memory devices | Julie Casperson Brewer, Wayne Kinney, Rene Meyer | 2020-10-13 |
| 10680171 | Two-terminal reversibly switchable memory device | Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez +2 more | 2020-06-09 |
| 10573522 | Method for preventing line bending during metal fill process | Adam Jandl, Sema Ermez, Sanjay Gopinath, Michal Danek, Siew Neo +2 more | 2020-02-25 |
| 10546751 | Forming low resistivity fluorine free tungsten film without nucleation | Hanna Bamnolker, Joshua Collins, Tomas Sadilek, Hyeong Seop Shin, Xiaolan Ba +2 more | 2020-01-28 |
| 10311950 | Conductive metal oxide structures in non-volatile re-writable memory devices | Julie Casperson Brewer, Wayne Kinney, Rene Meyer | 2019-06-04 |
| 10224480 | Two-terminal reversibly switchable memory device | Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez +2 more | 2019-03-05 |
| 9978605 | Method of forming low resistivity fluorine free tungsten film without nucleation | Hanna Bamnolker, Joshua Collins, Tomas Sadilek, Hyeong Seop Shin, Xiaolan Ba +2 more | 2018-05-22 |
| 9831425 | Two-terminal reversibly switchable memory device | Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez +2 more | 2017-11-28 |
| 9767897 | Conductive metal oxide structures in non-volatile re-writable memory devices | Julie Casperson Brewer, Wayne Kinney, Rene Meyer | 2017-09-19 |
| 9754824 | Tungsten films having low fluorine content | Xiaolan Ba | 2017-09-05 |
| 9613818 | Deposition of low fluorine tungsten by sequential CVD process | Xiaolan Ba, Raashina Humayun, Michal Danek | 2017-04-04 |
| 9293702 | Conductive metal oxide structures in non-volatile re-writable memory devices | Julie Casperson Brewer, Wayne Kinney, Rene Meyer | 2016-03-22 |
| 9293635 | Back junction back contact solar cell module and method of manufacturing the same | Richard Hamilton Sewell, Andreas Bentzen, Young Seen Lee, Hiroaki Hayashigatani, Toshio Itoh +3 more | 2016-03-22 |
| 9159913 | Two-terminal reversibly switchable memory device | Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez +2 more | 2015-10-13 |
| 8848425 | Conductive metal oxide structures in non volatile re-writable memory devices | Julie Casperson Brewer, Wayne Kinney, Rene Meyer | 2014-09-30 |
| 8565039 | Array operation using a schottky diode as a non-ohmic selection device | Roy Lambertson | 2013-10-22 |
| 8565006 | Conductive metal oxide structures in non volatile re writable memory devices | Julie Casperson Brewer, Wayne Kinney, Rene Meyer | 2013-10-22 |
| 8493771 | Non-volatile memory device ion barrier | Julie Casperson Brewer, Wayne Kinney, Roy Lambertson, Rene Meyer | 2013-07-23 |