DR

Darrell Rinerson

US Unity Semiconductor: 91 patents #2 of 55Top 4%
HL Hefei Reliance Memory Limited: 7 patents #7 of 28Top 25%
Micron: 6 patents #2,080 of 6,345Top 35%
AM AMD: 2 patents #3,994 of 9,279Top 45%
CS Catalyst Semiconductor: 2 patents #15 of 41Top 40%
Overall (All Time): #12,208 of 4,157,543Top 1%
109
Patents All Time

Issued Patents All Time

Showing 25 most recent of 109 patents

Patent #TitleCo-InventorsDate
11672189 Two-terminal reversibly switchable memory device Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez, Lawrence Schloss +2 more 2023-06-06
11502249 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, John Sanchez +2 more 2022-11-15
11398256 Local bit lines and methods of selecting the same to access memory elements in cross-point arrays Chang Hua Siau, Christophe J. Chevallier, Seow Fong Lim, Sri Rama Namala 2022-07-26
11063214 Two-terminal reversibly switchable memory device Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez, Lawrence Schloss +2 more 2021-07-13
10833125 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, John Sanchez +2 more 2020-11-10
10680171 Two-terminal reversibly switchable memory device Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez, Lawrence Schloss +2 more 2020-06-09
10622028 Local bit lines and methods of selecting the same to access memory elements in cross-point arrays Chang Hua Siau, Christophe J. Chevallier, Seow Fong Lim, Sri Rama Namala 2020-04-14
10340312 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, John Sanchez +2 more 2019-07-02
10224480 Two-terminal reversibly switchable memory device Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez, Lawrence Schloss +2 more 2019-03-05
10002646 Local bit lines and methods of selecting the same to access memory elements in cross-point arrays Chang Hua Siau, Christophe J. Chevallier, Seow Fong Lim, Sri Rama Namala 2018-06-19
9837149 Low read current architecture for memory Bruce L. Bateman, Christophe J. Chevallier, Chang Hua Siau 2017-12-05
9831425 Two-terminal reversibly switchable memory device Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez, Lawrence Schloss +2 more 2017-11-28
9806130 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, John Sanchez +2 more 2017-10-31
9570515 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, John Sanchez +2 more 2017-02-14
9368200 Low read current architecture for memory Bruce L. Bateman, Christophe J. Chevallier, Chang Hua Siau 2016-06-14
9159913 Two-terminal reversibly switchable memory device Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez, Lawrence Schloss +2 more 2015-10-13
9159408 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, John Sanchez +2 more 2015-10-13
8897050 Local bit lines and methods of selecting the same to access memory elements in cross-point arrays Chang Hua Siau, Christophe J. Chevallier, Seow Fong Lim, Sri Rama Namala 2014-11-25
8737151 Low read current architecture for memory Bruce L. Bateman, Christophe J. Chevallier, Chang Hua Siau 2014-05-27
8675389 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, John Sanchez +2 more 2014-03-18
8611130 Method for fabricating multi-resistive state memory devices Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, John Sanchez +2 more 2013-12-17
8569160 Device fabrication Robin Cheung 2013-10-29
8395928 Threshold device for a memory array Julie Casperson Brewer, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, Lawrence Schloss 2013-03-12
8314024 Device fabrication Robin Cheung 2012-11-20
8268667 Memory device using ion implant isolated conductive metal oxide Robin Cheung, David Hansen, Steven W. Longcor, Rene Meyer, Jonathan Bornstein +1 more 2012-09-18