| 12223994 |
Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays |
Durai Vishak Nirmal Ramaswamy |
2025-02-11 |
|
| 12080329 |
Ferroelectric devices and ferroelectric memory cells |
Albert Liao, Yi Fang Lee, Manzar Siddik |
2024-09-03 |
$19,072,000 |
| 12057472 |
Devices comprising crystalline materials |
Michael Mutch, Manuj Nahar |
2024-08-06 |
$38,187,000 |
| 12048167 |
Electronic devices including a seed region and magnetic regions |
Witold Kula, Gurtej S. Sandhu |
2024-07-23 |
$34,395,000 |
| 11955156 |
Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays |
Durai Vishak Nirmal Ramaswamy |
2024-04-09 |
$33,276,000 |
| 11672189 |
Two-terminal reversibly switchable memory device |
Darrell Rinerson, Christophe J. Chevallier, Roy Lambertson, John Sanchez, Lawrence Schloss +2 more |
2023-06-06 |
|
| 11594611 |
Transistors, memory cells and semiconductor constructions |
Durai Vishak Nirmal Ramaswamy, Kirk D. Prall |
2023-02-28 |
$15,268,000 |
| 11532699 |
Devices comprising crystalline materials and related systems |
Michael Mutch, Manuj Nahar |
2022-12-20 |
$19,538,000 |
| 11515331 |
Integrated assemblies comprising ferroelectric transistors and non-ferroelectric transistors |
— |
2022-11-29 |
$10,551,000 |
| 11502249 |
Memory element with a reactive metal layer |
Christophe J. Chevallier, Steve Kuo-Ren Hsia, Steven W. Longcor, Darrell Rinerson, John Sanchez +2 more |
2022-11-15 |
|
| 11398263 |
Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods |
Albert Liao, Yi Fang Lee, Manzar Siddik |
2022-07-26 |
$15,302,000 |
| 11393872 |
Electronic devices with seed and magnetic regions and methods of fabrication |
Witold Kula, Gurtej S. Sandhu |
2022-07-19 |
$10,980,000 |
| 11276449 |
Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays |
Durai Vishak Nirmal Ramaswamy |
2022-03-15 |
$16,938,000 |
| 11158670 |
Magnetic structures, semiconductor structures, and semiconductor devices |
Witold Kula, Stephen J. Kramer |
2021-10-26 |
$16,064,000 |
| 11063214 |
Two-terminal reversibly switchable memory device |
Darrell Rinerson, Christophe J. Chevallier, Roy Lambertson, John Sanchez, Lawrence Schloss +2 more |
2021-07-13 |
|
| 11037942 |
Memory cell and an array of memory cells |
Durai Vishak Nirmal Ramaswamy, Marco-Domenico Tiburzi |
2021-06-15 |
$19,940,000 |
| 10943986 |
Transistors, memory cells and semiconductor constructions comprising ferroelectric gate dielectric |
Durai Vishak Nirmal Ramaswamy, Kirk D. Prall |
2021-03-09 |
$21,153,000 |
| 10833125 |
Memory element with a reactive metal layer |
Christophe J. Chevallier, Steve Kuo-Ren Hsia, Steven W. Longcor, Darrell Rinerson, John Sanchez +2 more |
2020-11-10 |
|
| 10803935 |
Conductive metal oxide structures in non-volatile re-writable memory devices |
Lawrence Schloss, Julie Casperson Brewer, Rene Meyer |
2020-10-13 |
|
| 10790304 |
Integrated assemblies comprising ferroelectric transistors and non-ferroelectric transistors |
— |
2020-09-29 |
$16,991,000 |
| 10748594 |
Enabling fast pulse operation |
Gurtej S. Sandhu |
2020-08-18 |
$12,880,000 |
| 10726899 |
Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods |
Albert Liao, Yi Fang Lee, Manzar Siddik |
2020-07-28 |
$14,436,000 |
| 10707298 |
Methods of forming semiconductor structures |
Michael Mutch, Manuj Nahar |
2020-07-07 |
$18,795,000 |
| 10680171 |
Two-terminal reversibly switchable memory device |
Darrell Rinerson, Christophe J. Chevallier, Roy Lambertson, John Sanchez, Lawrence Schloss +2 more |
2020-06-09 |
|
| 10636471 |
Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays |
Durai Vishak Nirmal Ramaswamy |
2020-04-28 |
$22,554,000 |
