| 12199182 |
Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors |
Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Ramanathan Gandhi |
2025-01-14 |
|
| 11853552 |
Hybrid memory device using different types of capacitors |
Kevin J. Ryan, Durai Vishak Nirmal Ramaswamy, Robert Quinn |
2023-12-26 |
$15,560,000 |
| 11843055 |
Semiconductor devices comprising transistors having increased threshold voltage and related methods and systems |
Kamal M. Karda, Haitao Liu, Durai Vishak Nirmal Ramaswamy |
2023-12-12 |
$21,682,000 |
| 11744061 |
Array of capacitors, an array of memory cells, a method of forming an array of capacitors, and a method of forming an array of memory cells |
Sanh D. Tang, Mitsunari Sukekawa |
2023-08-29 |
$10,098,000 |
| 11706929 |
Memory cells |
Kamal M. Karda, Qian Tao, Durai Vishak Nirmal Ramaswamy, Haitao Liu, Ashonita A. Chavan |
2023-07-18 |
$8,312,000 |
| 11594611 |
Transistors, memory cells and semiconductor constructions |
Durai Vishak Nirmal Ramaswamy, Wayne Kinney |
2023-02-28 |
$15,268,000 |
| 11587615 |
Cross-point memory compensation |
Zengtao T. Liu |
2023-02-21 |
$8,544,000 |
| 11501817 |
Memory cell imprint avoidance |
Alessandro Calderoni, Durai Vishak Nirmal Ramaswamy, Ferdinando Bedeschi |
2022-11-15 |
$13,792,000 |
| 11244951 |
Memory cells |
Kamal M. Karda, Qian Tao, Durai Vishak Nirmal Ramaswamy, Haitao Liu, Ashonita A. Chavan |
2022-02-08 |
$27,820,000 |
| 11177266 |
Array of capacitors, an array of memory cells, a method of forming an array of capacitors, and a method of forming an array of memory cells |
Sanh D. Tang, Mitsunari Sukekawa |
2021-11-16 |
$19,987,000 |
| 11152509 |
Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors |
Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Ramanathan Gandhi |
2021-10-19 |
$15,836,000 |
| 11068166 |
Hybrid memory device using different types of capacitors and operating method thereof |
Kevin J. Ryan, Durai Vishak Nirmal Ramaswamy, Robert Quinn |
2021-07-20 |
$22,424,000 |
| 11004510 |
Cross-point memory compensation |
Zengtao T. Liu |
2021-05-11 |
$21,304,000 |
| 10978128 |
Memory cell imprint avoidance |
Alessandro Calderoni, Durai Vishak Nirmal Ramaswamy, Ferdinando Bedeschi |
2021-04-13 |
$23,307,000 |
| 10943986 |
Transistors, memory cells and semiconductor constructions comprising ferroelectric gate dielectric |
Durai Vishak Nirmal Ramaswamy, Wayne Kinney |
2021-03-09 |
$21,153,000 |
| 10943915 |
Integrated memory having the body region comprising a different semiconductor composition than the source/drain region |
Kamal M. Karda, Albert Fayrushin, Haitao Liu |
2021-03-09 |
$21,153,000 |
| 10741567 |
Memory cells |
Kamal M. Karda, Qian Tao, Durai Vishak Nirmal Ramaswamy, Haitao Liu, Ashonita A. Chavan |
2020-08-11 |
$17,356,000 |
| 10727336 |
Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors |
Durai Vishak Nirmal Ramaswamy |
2020-07-28 |
$14,436,000 |
| 10679696 |
Cross-point memory compensation |
Zengtao T. Liu |
2020-06-09 |
$20,266,000 |
| 10629732 |
Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors |
Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Ramanathan Gandhi |
2020-04-21 |
$19,831,000 |
| 10475500 |
Memory cell imprint avoidance |
Alessandro Calderoni, Durai Vishak Nirmal Ramaswamy, Ferdinando Bedeschi |
2019-11-12 |
$21,044,000 |
| 10282108 |
Hybrid memory device using different types of capacitors |
Kevin J. Ryan, Durai Vishak Nirmal Ramaswamy, Robert Quinn |
2019-05-07 |
$18,348,000 |
| 10217753 |
Memory cells |
Kamal M. Karda, Qian Tao, Durai Vishak Nirmal Ramaswamy, Haitao Liu, Ashonita A. Chavan |
2019-02-26 |
$27,872,000 |
| 10083732 |
Memory cell imprint avoidance |
Alessandro Calderoni, Durai Vishak Nirmal Ramaswamy, Ferdinando Bedeschi |
2018-09-25 |
$17,810,000 |
| 10084084 |
Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors |
Durai Vishak Nirmal Ramaswamy |
2018-09-25 |
$17,810,000 |
