Issued Patents All Time
Showing 25 most recent of 225 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12199182 | Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors | Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Ramanathan Gandhi | 2025-01-14 |
| 11853552 | Hybrid memory device using different types of capacitors | Kevin J. Ryan, Durai Vishak Nirmal Ramaswamy, Robert Quinn | 2023-12-26 |
| 11843055 | Semiconductor devices comprising transistors having increased threshold voltage and related methods and systems | Kamal M. Karda, Haitao Liu, Durai Vishak Nirmal Ramaswamy | 2023-12-12 |
| 11744061 | Array of capacitors, an array of memory cells, a method of forming an array of capacitors, and a method of forming an array of memory cells | Sanh D. Tang, Mitsunari Sukekawa | 2023-08-29 |
| 11706929 | Memory cells | Kamal M. Karda, Qian Tao, Durai Vishak Nirmal Ramaswamy, Haitao Liu, Ashonita A. Chavan | 2023-07-18 |
| 11594611 | Transistors, memory cells and semiconductor constructions | Durai Vishak Nirmal Ramaswamy, Wayne Kinney | 2023-02-28 |
| 11587615 | Cross-point memory compensation | Zengtao T. Liu | 2023-02-21 |
| 11501817 | Memory cell imprint avoidance | Alessandro Calderoni, Durai Vishak Nirmal Ramaswamy, Ferdinando Bedeschi | 2022-11-15 |
| 11244951 | Memory cells | Kamal M. Karda, Qian Tao, Durai Vishak Nirmal Ramaswamy, Haitao Liu, Ashonita A. Chavan | 2022-02-08 |
| 11177266 | Array of capacitors, an array of memory cells, a method of forming an array of capacitors, and a method of forming an array of memory cells | Sanh D. Tang, Mitsunari Sukekawa | 2021-11-16 |
| 11152509 | Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors | Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Ramanathan Gandhi | 2021-10-19 |
| 11068166 | Hybrid memory device using different types of capacitors and operating method thereof | Kevin J. Ryan, Durai Vishak Nirmal Ramaswamy, Robert Quinn | 2021-07-20 |
| 11004510 | Cross-point memory compensation | Zengtao T. Liu | 2021-05-11 |
| 10978128 | Memory cell imprint avoidance | Alessandro Calderoni, Durai Vishak Nirmal Ramaswamy, Ferdinando Bedeschi | 2021-04-13 |
| 10943915 | Integrated memory having the body region comprising a different semiconductor composition than the source/drain region | Kamal M. Karda, Albert Fayrushin, Haitao Liu | 2021-03-09 |
| 10943986 | Transistors, memory cells and semiconductor constructions comprising ferroelectric gate dielectric | Durai Vishak Nirmal Ramaswamy, Wayne Kinney | 2021-03-09 |
| 10741567 | Memory cells | Kamal M. Karda, Qian Tao, Durai Vishak Nirmal Ramaswamy, Haitao Liu, Ashonita A. Chavan | 2020-08-11 |
| 10727336 | Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors | Durai Vishak Nirmal Ramaswamy | 2020-07-28 |
| 10679696 | Cross-point memory compensation | Zengtao T. Liu | 2020-06-09 |
| 10629732 | Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors | Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Ramanathan Gandhi | 2020-04-21 |
| 10475500 | Memory cell imprint avoidance | Alessandro Calderoni, Durai Vishak Nirmal Ramaswamy, Ferdinando Bedeschi | 2019-11-12 |
| 10282108 | Hybrid memory device using different types of capacitors | Kevin J. Ryan, Durai Vishak Nirmal Ramaswamy, Robert Quinn | 2019-05-07 |
| 10217753 | Memory cells | Kamal M. Karda, Qian Tao, Durai Vishak Nirmal Ramaswamy, Haitao Liu, Ashonita A. Chavan | 2019-02-26 |
| 10084084 | Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors | Durai Vishak Nirmal Ramaswamy | 2018-09-25 |
| 10083732 | Memory cell imprint avoidance | Alessandro Calderoni, Durai Vishak Nirmal Ramaswamy, Ferdinando Bedeschi | 2018-09-25 |