| 12218236 |
Devices including heterogeneous channels, and related memory devices, electronic systems, and methods |
Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Yi Fang Lee, Kamal M. Karda |
2025-02-04 |
| 12199183 |
Memory devices including oxide semiconductor |
Scott E. Sills, Durai Vishak Nirmal Ramaswamy |
2025-01-14 |
| 12199182 |
Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors |
Scott E. Sills, Kirk D. Prall, Durai Vishak Nirmal Ramaswamy |
2025-01-14 |
| 12170324 |
Transistors and arrays of elevationally-extending strings of memory cells |
Augusto Benvenuti, Giovanni Maria Paolucci |
2024-12-17 |
| 12133383 |
Memory cell and method used in forming a memory cells |
Venkatakrishnan Sriraman, Dae-Hong Eom, Donghua Li, Ashok Kumar Muthukumaran |
2024-10-29 |
| 12101946 |
Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies |
Kamal M. Karda, Yi Fang Lee, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Karthik Sarpatwari +2 more |
2024-09-24 |
| 11996456 |
Assemblies which include ruthenium-containing conductive gates |
— |
2024-05-28 |
| 11908913 |
Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices |
Durai Vishak Nirmal Ramaswamy, Scott E. Sills |
2024-02-20 |
| 11856766 |
Memory cell having programmable material comprising at least two regions comprising SiNx |
Venkatakrishnan Sriraman, Dae-Hong Eom, Donghua Li, Ashok Kumar Muthukumaran |
2023-12-26 |
| 11832454 |
Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies |
Kamal M. Karda, Yi Fang Lee, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Karthik Sarpatwari +2 more |
2023-11-28 |
| 11695050 |
Assemblies which include ruthenium-containing conductive gates |
— |
2023-07-04 |
| 11658246 |
Devices including vertical transistors, and related methods and electronic systems |
Kamal M. Karda, Yi Fang Lee, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Scott E. Sills |
2023-05-23 |
| 11538919 |
Transistors and arrays of elevationally-extending strings of memory cells |
Augusto Benvenuti, Giovanni Maria Paolucci |
2022-12-27 |
| 11527620 |
Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material |
Kamal M. Karda, Deepak Chandra Pandey, Haitao Liu, Richard J. Hill, Guangyu Huang +2 more |
2022-12-13 |
| 11515417 |
Transistors including heterogeneous channels |
Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Yi Fang Lee, Kamal M. Karda |
2022-11-29 |
| 11476259 |
Memory devices including void spaces between transistor features, and related semiconductor devices and electronic systems |
Kamal M. Karda, Hong Li, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Sanh D. Tang +1 more |
2022-10-18 |
| 11437521 |
Methods of forming a semiconductor device |
Scott E. Sills, Durai Vishak Nirmal Ramaswamy |
2022-09-06 |
| 11335788 |
Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices |
Durai Vishak Nirmal Ramaswamy, Scott E. Sills |
2022-05-17 |
| 11329133 |
Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assemblies |
Yi Fang Lee, Isamu Asano, Scott E. Sills |
2022-05-10 |
| 11152509 |
Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors |
Scott E. Sills, Kirk D. Prall, Durai Vishak Nirmal Ramaswamy |
2021-10-19 |
| 11107817 |
Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies |
Kamal M. Karda, Yi Fang Lee, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Karthik Sarpatwari +2 more |
2021-08-31 |
| 11038027 |
Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material |
Kamal M. Karda, Deepak Chandra Pandey, Haitao Liu, Richard J. Hill, Guangyu Huang +2 more |
2021-06-15 |
| 10998440 |
Device including a vertical transistor having a large band gap channel material and void spaces adjacent gate electrodes, and related methods and systems |
Kamal M. Karda, Hong Li, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Sanh D. Tang +1 more |
2021-05-04 |
| 10964793 |
Assemblies which include ruthenium-containing conductive gates |
— |
2021-03-30 |
| 10629732 |
Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors |
Scott E. Sills, Kirk D. Prall, Durai Vishak Nirmal Ramaswamy |
2020-04-21 |