RG

Ramanathan Gandhi

Micron: 23 patents #776 of 6,345Top 15%
Overall (All Time): #157,127 of 4,157,543Top 4%
25
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12218236 Devices including heterogeneous channels, and related memory devices, electronic systems, and methods Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Yi Fang Lee, Kamal M. Karda 2025-02-04
12199183 Memory devices including oxide semiconductor Scott E. Sills, Durai Vishak Nirmal Ramaswamy 2025-01-14
12199182 Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors Scott E. Sills, Kirk D. Prall, Durai Vishak Nirmal Ramaswamy 2025-01-14
12170324 Transistors and arrays of elevationally-extending strings of memory cells Augusto Benvenuti, Giovanni Maria Paolucci 2024-12-17
12133383 Memory cell and method used in forming a memory cells Venkatakrishnan Sriraman, Dae-Hong Eom, Donghua Li, Ashok Kumar Muthukumaran 2024-10-29
12101946 Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies Kamal M. Karda, Yi Fang Lee, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Karthik Sarpatwari +2 more 2024-09-24
11996456 Assemblies which include ruthenium-containing conductive gates 2024-05-28
11908913 Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices Durai Vishak Nirmal Ramaswamy, Scott E. Sills 2024-02-20
11856766 Memory cell having programmable material comprising at least two regions comprising SiNx Venkatakrishnan Sriraman, Dae-Hong Eom, Donghua Li, Ashok Kumar Muthukumaran 2023-12-26
11832454 Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies Kamal M. Karda, Yi Fang Lee, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Karthik Sarpatwari +2 more 2023-11-28
11695050 Assemblies which include ruthenium-containing conductive gates 2023-07-04
11658246 Devices including vertical transistors, and related methods and electronic systems Kamal M. Karda, Yi Fang Lee, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Scott E. Sills 2023-05-23
11538919 Transistors and arrays of elevationally-extending strings of memory cells Augusto Benvenuti, Giovanni Maria Paolucci 2022-12-27
11527620 Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material Kamal M. Karda, Deepak Chandra Pandey, Haitao Liu, Richard J. Hill, Guangyu Huang +2 more 2022-12-13
11515417 Transistors including heterogeneous channels Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Yi Fang Lee, Kamal M. Karda 2022-11-29
11476259 Memory devices including void spaces between transistor features, and related semiconductor devices and electronic systems Kamal M. Karda, Hong Li, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Sanh D. Tang +1 more 2022-10-18
11437521 Methods of forming a semiconductor device Scott E. Sills, Durai Vishak Nirmal Ramaswamy 2022-09-06
11335788 Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices Durai Vishak Nirmal Ramaswamy, Scott E. Sills 2022-05-17
11329133 Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assemblies Yi Fang Lee, Isamu Asano, Scott E. Sills 2022-05-10
11152509 Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors Scott E. Sills, Kirk D. Prall, Durai Vishak Nirmal Ramaswamy 2021-10-19
11107817 Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies Kamal M. Karda, Yi Fang Lee, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Karthik Sarpatwari +2 more 2021-08-31
11038027 Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material Kamal M. Karda, Deepak Chandra Pandey, Haitao Liu, Richard J. Hill, Guangyu Huang +2 more 2021-06-15
10998440 Device including a vertical transistor having a large band gap channel material and void spaces adjacent gate electrodes, and related methods and systems Kamal M. Karda, Hong Li, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Sanh D. Tang +1 more 2021-05-04
10964793 Assemblies which include ruthenium-containing conductive gates 2021-03-30
10629732 Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors Scott E. Sills, Kirk D. Prall, Durai Vishak Nirmal Ramaswamy 2020-04-21